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2N6439 PDF预览

2N6439

更新时间: 2024-11-03 23:16:11
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频双极晶体管放大器局域网
页数 文件大小 规格书
6页 130K
描述
60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON

2N6439 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, O-CXFM-F4
Reach Compliance Code:unknown风险等级:5.13
外壳连接:ISOLATED基于收集器的最大容量:75 pF
集电极-发射极最大电压:33 V配置:SINGLE
最小直流电流增益 (hFE):10最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:O-CXFM-F4元件数量:1
端子数量:4封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:146 W
最小功率增益 (Gp):7.8 dB认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:UNSPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2N6439 数据手册

 浏览型号2N6439的Datasheet PDF文件第2页浏览型号2N6439的Datasheet PDF文件第3页浏览型号2N6439的Datasheet PDF文件第4页浏览型号2N6439的Datasheet PDF文件第5页浏览型号2N6439的Datasheet PDF文件第6页 
Order this document  
by 2N6439/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
. . . designed primarily for wideband large–signal output amplifier stages in the  
225 to 400 MHz frequency range.  
Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc  
Output Power = 60 Watts over 225 to 400 MHz Band  
Minimum Gain = 7.8 dB @ 400 MHz  
60 W, 225 to 400 MHz  
CONTROLLED “Q”  
BROADBAND RF POWER  
TRANSISTOR  
Built–In Matching Network for Broadband Operation Using Double  
Match Technique  
NPN SILICON  
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR  
Gold Metallization System for High Reliability Applications  
CASE 316–01, STYLE 1  
MAXIMUM RATINGS*  
Rating  
Symbol  
Value  
33  
Unit  
Vdc  
Vdc  
Vdc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
60  
4.0  
Total Device Dissipation @ T = 25°C (1)  
Derate above 25°C  
P
D
146  
0.83  
Watts  
W/°C  
C
Storage Temperature Range  
THERMAL CHARACTERISTICS  
T
stg  
65 to +200  
°C  
Characteristic  
Thermal Resistance, Junction to Case  
ELECTRICAL CHARACTERISTICS* (T = 25°C unless otherwise noted.)  
Symbol  
Max  
Unit  
R
1.2  
°C/W  
θJC  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I = 50 mAdc, I = 0)  
V
33  
60  
4.0  
Vdc  
Vdc  
(BR)CEO  
C
B
Collector–Emitter Breakdown Voltage  
(I = 50 mAdc, V = 0)  
V
(BR)CES  
(BR)EBO  
C
BE  
Emitter–Base Breakdown Voltage  
(I = 5.0 mAdc, I = 0)  
V
Vdc  
E
C
Collector Cutoff Current  
(V = 30 Vdc, I = 0)  
I
2.0  
mAdc  
CBO  
CB  
NOTE:  
E
(continued)  
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF  
amplifiers.  
* Indicates JEDEC Registered Data.  
Motorola, Inc. 1994  

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