生命周期: | Contact Manufacturer | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.56 |
最大集电极电流 (IC): | 25 A | 配置: | Single |
最小直流电流增益 (hFE): | 12 | 最高工作温度: | 200 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 200 W |
子类别: | Other Transistors | 表面贴装: | NO |
标称过渡频率 (fT): | 40 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6438A | NJSEMI |
获取价格 |
Trans GP BJT PNP 120V 25A 3-Pin(2+Tab) TO-3 | |
2N6439 | ASI |
获取价格 |
NPN SILICON RF POWER TRANSISTOR | |
2N6439 | MOTOROLA |
获取价格 |
60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND | |
2N6439 | TE |
获取价格 |
POWER TRANSISTOR | |
2N6439 | NJSEMI |
获取价格 |
BROADBAND RF POWER TRANSISTOR | |
2N6439 | MACOM |
获取价格 |
Bipolar The RF Line NPN Silicon Power Transistor 60W, 225 to 400MHz, 28V | |
2N6441 | ETC |
获取价格 |
SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS | |
2N6442 | ETC |
获取价格 |
SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS | |
2N6443 | ETC |
获取价格 |
SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS | |
2N6444 | ETC |
获取价格 |
SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS |