Datasheet > 2N6439

2N6439

更新时间： 2024-11-03 23:16:11

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泰科 - TE		晶体晶体管放大器局域网
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6页	139K
描述
POWER TRANSISTOR

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2N6439 数据手册

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SEMICONDUCTOR TECHNICAL DATA

by 2N6439/D

The RF Line

NP N S ilic on

2N 6439

. . . designed primarily for wideband large–signal output amplifier stages in the

225 to 400 MHz frequency range.

•

Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

Output Power = 60 Watts over 225 to 400 MHz Band

Minimum Gain = 7.8 dB @ 400 MHz

60 W, 225 to 400 MHz

CONTROLLED “Q”

BROADBAND RF POWER

TRANSISTOR

•

Built–In Matching Network for Broadband Operation Using Double

Match Technique

NPN SILICON

•

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

Gold Metallization System for High Reliability Applications

CASE 316–01, STYLE 1

MAXIMUM RATINGS*

Rating

Symbol

Value

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

4.0

Total Device Dissipation @ T = 25°C (1)

146

Watts

Derate above 25°C

0.83

W/°C

Storage Temperature Range

THERMAL CHARACTERISTICS

stg

–65 to +200

°C

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.2

°C/W

ELECTRICAL CHARACTERISTICS* (T = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = 50 mAdc, I = 0)

4.0

—

Vdc

(BR)CEO

Collector–Emitter Breakdown Voltage

(I = 50 mAdc, V = 0)

(BR)CES

Emitter–Base Breakdown Voltage

(I = 5.0 mAdc, I = 0)

—

Vdc

(BR)EBO

Collector Cutoff Current

(V = 30 Vdc, I = 0)

2.0

mAdc

CBO

NOTE:

(continued)

1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF

amplifiers.

* Indicates JEDEC Registered Data.

12 3 4 5 6

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