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2N6437 PDF预览

2N6437

更新时间: 2024-11-24 23:16:11
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管局域网
页数 文件大小 规格书
8页 78K
描述
POWER TRANSISTORS PNP SILICON

2N6437 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-3包装说明:TO-3, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.12
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):25 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):12
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):200 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

2N6437 数据手册

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ON Semiconductort  
2N6437  
2N6438  
High-Power PNP Silicon  
Transistors  
*
. . . designed for use in industrial–military power amplifier and  
*ON Semiconductor Preferred Device  
switching circuit applications.  
25 AMPERE  
POWER TRANSISTORS  
PNP SILICON  
High Collector–Emitter Sustaining Voltage —  
V
= 100 Vdc (Min) — 2N6437  
CEO(sus)  
= 120 Vdc (Min) — 2N6438  
100, 120 VOLTS  
200 WATTS  
High DC Current Gain —  
= 20–80 @I = 10 Adc  
h
FE  
C
= 12 (Min) @ I = 25 Adc  
C
Low Collector–Emitter Saturation Voltage —  
= 1.0 Vdc (Max) @ I = 10 Adc  
V
CE(sat)  
C
Fast Switching Times @ I = 10 Adc  
C
t = 0.3 µs (Max)  
r
t = 1.0 µs (Max)  
t = 0.25 µs (Max)  
f
s
CASE 1–07  
TO–204AA  
(TO–3)  
Complement to NPN 2N6339 thru 2N6341  
MAXIMUM RATINGS (1)  
Rating  
Collector–Base Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
Symbol  
2N6437  
120  
2N6438  
140  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CB  
V
CEO  
100  
120  
V
EB  
6.0  
Collector Current — Continuous  
Peak  
I
C
25  
50  
Base Current  
I
B
10  
Adc  
Total Device Dissipation @ T = 25_C  
P
200  
1.14  
Watts  
C
D
Derate above 25_C  
W/_C  
Operating and Storage Junction  
Temperature Range  
T ,T  
J
–65 to +200  
_C  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
(1) Indicates JEDEC Registered Data.  
R
0.875  
_C/W  
θ
JC  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
April, 2001 – Rev. 2  
2N6437/D  

2N6437 替代型号

型号 品牌 替代类型 描述 数据表
JANTX2N6437 MICROSEMI

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Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,

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