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2N6058 PDF预览

2N6058

更新时间: 2024-11-01 22:45:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管局域网
页数 文件大小 规格书
8页 131K
描述
Darlington Complementary Silicon Power Transistors

2N6058 数据手册

 浏览型号2N6058的Datasheet PDF文件第2页浏览型号2N6058的Datasheet PDF文件第3页浏览型号2N6058的Datasheet PDF文件第4页浏览型号2N6058的Datasheet PDF文件第5页浏览型号2N6058的Datasheet PDF文件第6页浏览型号2N6058的Datasheet PDF文件第7页 
ON Semiconductort  
PNP  
*
Darlington Complementary  
Silicon Power Transistors  
2N6052  
NPN  
. . . designed for general–purpose amplifier and low frequency  
switching applications.  
2N6058  
High DC Current Gain —  
*
h
= 3500 (Typ) @ I = 5.0 Adc  
FE  
C
2N6059  
*ON Semiconductor Preferred Device  
Collector–Emitter Sustaining Voltage — @ 100 mA  
V
= 80 Vdc (Min) — 2N6058  
CEO(sus)  
100 Vdc (Min) — 2N6052, 2N6059  
Monolithic Construction with Built–In Base–Emitter Shunt Resistors  
DARLINGTON  
12 AMPERE  
MAXIMUM RATINGS (1)  
COMPLEMENTARY  
SILICON  
POWER TRANSISTORS  
80–100 VOLTS  
150 WATTS  
2N6052  
2N6059  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base voltage  
Symbol  
2N6058  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
100  
V
80  
100  
CB  
EB  
V
5.0  
Collector Current — Continuous  
Peak  
I
C
12  
20  
Base Current  
I
B
0.2  
Adc  
Total Device Dissipation  
P
D
150  
Watts  
@T = 25_C  
C
Derate above 25_C  
0.857  
W/_C  
_C  
CASE 1–07  
TO–204AA  
(TO–3)  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to +200_C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Rating  
Unit  
Thermal Resistance, Junction to Case  
(1) Indicates JEDEC Registered Data.  
R
1.17  
_C/W  
θ
JC  
160  
140  
120  
100  
80  
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
T , CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 2  
2N6052/D  

2N6058 替代型号

型号 品牌 替代类型 描述 数据表
2N6338G ONSEMI

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