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2N6058 PDF预览

2N6058

更新时间: 2024-01-24 13:39:25
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管局域网
页数 文件大小 规格书
8页 131K
描述
Darlington Complementary Silicon Power Transistors

2N6058 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-204AA
包装说明:TO-3, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.06
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):12 A集电极-发射极最大电压:80 V
配置:DARLINGTON最小直流电流增益 (hFE):750
JEDEC-95代码:TO-3JESD-30 代码:O-MBFM-P2
JESD-609代码:e3元件数量:1
端子数量:2封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN (315)端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:10
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

2N6058 数据手册

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ON Semiconductort  
PNP  
*
Darlington Complementary  
Silicon Power Transistors  
2N6052  
NPN  
. . . designed for general–purpose amplifier and low frequency  
switching applications.  
2N6058  
High DC Current Gain —  
*
h
= 3500 (Typ) @ I = 5.0 Adc  
FE  
C
2N6059  
*ON Semiconductor Preferred Device  
Collector–Emitter Sustaining Voltage — @ 100 mA  
V
= 80 Vdc (Min) — 2N6058  
CEO(sus)  
100 Vdc (Min) — 2N6052, 2N6059  
Monolithic Construction with Built–In Base–Emitter Shunt Resistors  
DARLINGTON  
12 AMPERE  
MAXIMUM RATINGS (1)  
COMPLEMENTARY  
SILICON  
POWER TRANSISTORS  
80–100 VOLTS  
150 WATTS  
2N6052  
2N6059  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base voltage  
Symbol  
2N6058  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
100  
V
80  
100  
CB  
EB  
V
5.0  
Collector Current — Continuous  
Peak  
I
C
12  
20  
Base Current  
I
B
0.2  
Adc  
Total Device Dissipation  
P
D
150  
Watts  
@T = 25_C  
C
Derate above 25_C  
0.857  
W/_C  
_C  
CASE 1–07  
TO–204AA  
(TO–3)  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to +200_C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Rating  
Unit  
Thermal Resistance, Junction to Case  
(1) Indicates JEDEC Registered Data.  
R
1.17  
_C/W  
θ
JC  
160  
140  
120  
100  
80  
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
T , CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 2  
2N6052/D  

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