Datasheet > 2N6055_12

2N6055_12

更新时间： 2022-05-21 04:07:43

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
3页	77K
描述
POWER COMPLEMENTARY SILICON TRANSISTORS

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2N6055_12 数据手册

NPN 2N6055

POWER COMPLEMENTARY SILICON TRANSISTORS

The 2N6055 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted

in Jedec TO-3 metal case.

They are inteded for use in power linear and low frequency switching applications.

The complementary PNP types are 2N6053.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

I_CM

I_B

Collector-Base Voltage

Collector-EmitterVoltage

Emitter-Base Voltage

Collector Current

Collector Peak Current

Base Current

I_E=0

I_B=0

I_C=0

2N6055

5.0

120

100

P_T

Power Dissipation

@ T_C< 25°

T_J

T_s

200

-65 to +200

Junction

Storage Temperature

°C

THERMAL CHARACTERISTICS

Symbol

R_thJ-C

Ratings

Value

Unit

Thermal Resistance, Junction to Case

1.17

°C/W

17/10/2012

COMSET SEMICONDUCTORS

1 | 3

12 3

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与2N6055_12相关器件

型号	品牌	描述	获取价格	数据表
2N6055A	NJSEMI	Trans Darlington NPN/PNP 60V 8A 3-Pin(2+Tab) TO-3 Sleeve	获取价格
2N6055LEADFREE	CENTRAL	Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 P	获取价格
2N6056	MOSPEC	POWER TRANSISTORS(8A,100W)	获取价格
2N6056	ONSEMI	NPN Darlington Silicon Power Transistor	获取价格
2N6056	SEME-LAB	Bipolar NPN Device in a Hermetically sealed TO3	获取价格
2N6056	NJSEMI	COMPLEMENTARY SILICON POWER TRANSISTORS	获取价格