Datasheet > 2N6055_12

2N6055_12

更新时间： 2022-05-21 04:07:43

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
3页	77K
描述
POWER COMPLEMENTARY SILICON TRANSISTORS

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数据手册

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2N6055_12 数据手册

NPN 2N6055

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

I_CEX

Ratings

Test Condition(s)

Min Typ MAx Unit

V_CE= V_CEX=60 V_,V_BE=-1.5 V 2N6055

500

µA

Collector Cutoff

Current

V_CE= V_CEX=60 V_,V_BE=-1.5 V

2N6055

T_C=150°C

Collector Cutoff

Current

Emitter Cutoff

Current

I_CEO

I_EBO

V_CE=30 Vdc, I_B=0

V_EB=5 V

2N6055

0.5

2.0

Collector-Emitter

V_CEO(SUS)Sustaining Voltage I_C=0.1 A

2N6055

2.0

3.0

(*)

I_C=4 A, I_B=16 mA

Collector-Emitter

saturation Voltage

(*)

V_CE(SAT)

I_C=8 A, I_B=80 mA

Base-Emitter

V_BE(SAT)

V_BE(ON)

f_T

Saturation Voltage I_C=8 A, I_B=80 mA

(*)

Base-Emitter

I_C=4 A, V_CE=3 V

Voltage (*)

2.8

Transition

Frequency

I_C=3 A, V_CE=3 V, f=1 MHz

MHz

V_CE=3 V, I_C=4 A

2N6055 750

2N6055 100

18000

DC Current Gain

(*)

h_FE

V_CE=3.0 V, I_C=8 A

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

17/10/2012

COMSET SEMICONDUCTORS

2 | 3

123

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