Datasheet > 2N6056

2N6056

更新时间： 2024-11-02 06:15:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
3页	132K
描述
Silicon NPN Power Transistors

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中文翻译

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技术参数
数据手册

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2N6056 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.79

2N6056 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6055 2N6056

DESCRIPTION

·With TO-3 package

·Low collector saturation voltage

·DARLINGTON

·Complement to type 2N6053;2N6054

APPLICATIONS

·General-purpose power amplifier and low

frequency swithing applications

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N6055

2N6056

2N6055

2N6056

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

Collector current-peak

Base current

120

100

200

-65~200

℃

P_D

T_j

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25℃

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

1.75

℃/W

12 3

中文翻译

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与2N6056相关器件

型号	品牌	获取价格	描述	数据表
2N6056/D	ETC	获取价格	NPN Darlington Silicon Power Transistor
2N6056LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 P
2N6057	BOCA	获取价格	DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS
2N6057	COMSET	获取价格	POWER COMPLEMENTARY SILICON TRANSISTORS
2N6057	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3
2N6057	MOSPEC	获取价格	POWER TRANSISTORS(12A,150W)
2N6057	NJSEMI	获取价格	Trans Darlington NPN 60V 12A 3-Pin(2+Tab) TO-3 Sleeve
2N6057	CENTRAL	获取价格	12A,60V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington
2N6057_12	COMSET	获取价格	POWER COMPLEMENTARY SILICON TRANSISTORS
2N6057LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2