Datasheet > 2N6057

2N6057

更新时间： 2024-04-09 18:58:25

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
18页	1468K
描述
12A,60V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

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2N6057 数据手册

2N6057

2N6058

2N6059

www.centralsemi.com

NPN SILICON

DARLINGTON POWER

TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6057 series

devices are NPN silicon Darlington power transistors,

manufactured by the epitaxial base process, designed

for high gain amplifier and switching applications.

Complementary PNP devices: 2N6050, 2N6051,

2N6052.

MARKING: FULL PART NUMBER

TO-3 CASE

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

2N6057

2N6058

2N6059

100

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

100

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

0.2

150

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +200

1.17

°C

°C/W

stg



ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=Rated V

=½Rated V

=5.0V

, V =1.5V

0.5

CEV

CEO

EBO

CEO EB

, V =1.5V, T =150°C

CEO EB

5.0

1.0

2.0

CEO

I =100mA, (2N6057)

CEO

I =100mA, (2N6058)

I =100mA, (2N6059)

100

CEO

I =6.0A, I =24mA

2.0

3.0

4.0

2.8

18K

CE(SAT)

BE(SAT)

BE(ON)

I =12A, I =120mA

=3.0V, I =6.0A

750

100

300

4.0

=3.0V, I =12A

=3.0V, I =5.0A, f=1.0kHz

=3.0V, I =5.0A, f=1.0MHz

MHz

=10V, I =0, f=100kHz

300

R2 (28-October 2021)

12 3 4 5 6 7...18

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