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2N6058 PDF预览

2N6058

更新时间: 2024-11-13 17:00:35
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
18页 1468K
描述
12A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

2N6058 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-204AA
包装说明:TO-3, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.18
外壳连接:COLLECTOR最大集电极电流 (IC):12 A
集电极-发射极最大电压:80 V配置:DARLINGTON
最小直流电流增益 (hFE):750JEDEC-95代码:TO-3
JESD-30 代码:O-MBFM-P2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):150 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

2N6058 数据手册

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2N6057  
2N6058  
2N6059  
www.centralsemi.com  
NPN SILICON  
DARLINGTON POWER  
TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N6057 series  
devices are NPN silicon Darlington power transistors,  
manufactured by the epitaxial base process, designed  
for high gain amplifier and switching applications.  
Complementary PNP devices: 2N6050, 2N6051,  
2N6052.  
MARKING: FULL PART NUMBER  
TO-3 CASE  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
2N6057  
60  
2N6058  
2N6059  
100  
UNITS  
V
C
V
V
V
80  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
60  
80  
5.0  
100  
V
V
Continuous Collector Current  
Peak Collector Current  
I
12  
A
C
I
20  
A
CM  
Continuous Base Current  
Power Dissipation  
I
0.2  
A
B
P
150  
W
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +200  
1.17  
°C  
°C/W  
J
stg  
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
I
V
V
V
V
=Rated V  
=Rated V  
=½Rated V  
=5.0V  
, V =1.5V  
0.5  
mA  
CEV  
CEV  
CEO  
EBO  
CE  
CE  
CE  
EB  
CEO EB  
, V =1.5V, T =150°C  
CEO EB  
5.0  
1.0  
2.0  
mA  
mA  
mA  
V
C
CEO  
BV  
BV  
BV  
I =100mA, (2N6057)  
60  
80  
CEO  
CEO  
C
I =100mA, (2N6058)  
V
C
I =100mA, (2N6059)  
100  
V
CEO  
C
V
V
V
V
I =6.0A, I =24mA  
2.0  
3.0  
4.0  
2.8  
18K  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
B
I =12A, I =120mA  
V
C
B
I =12A, I =120mA  
V
C
B
V
=3.0V, I =6.0A  
V
CE  
CE  
CE  
CE  
CE  
CB  
C
h
h
h
V
V
V
V
V
=3.0V, I =6.0A  
750  
100  
300  
4.0  
C
=3.0V, I =12A  
FE  
C
=3.0V, I =5.0A, f=1.0kHz  
fe  
C
f
=3.0V, I =5.0A, f=1.0MHz  
MHz  
pF  
T
C
C
=10V, I =0, f=100kHz  
300  
ob  
E
R2 (28-October 2021)  

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