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2N6056 PDF预览

2N6056

更新时间: 2024-02-07 21:15:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管局域网
页数 文件大小 规格书
8页 102K
描述
NPN Darlington Silicon Power Transistor

2N6056 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, O-MBFM-P2Reach Compliance Code:compliant
风险等级:5.64最大集电极电流 (IC):8 A
集电极-发射极最大电压:80 V配置:DARLINGTON
最小直流电流增益 (hFE):100JEDEC-95代码:TO-3
JESD-30 代码:O-MBFM-P2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:200 °C最低工作温度:-65 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN表面贴装:NO
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

2N6056 数据手册

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ON Semiconductort  
2N6056  
NPN Darlington Silicon Power  
Transistor  
ON Semiconductor Preferred Device  
. . . designed for general–purpose amplifier and low frequency  
switching applications.  
DARLINGTON  
8 AMPERE  
High DC Current Gain —  
h
FE  
= 3000 (Typ) @ I = 4.0 Adc  
C
SILICON  
POWER TRANSISTOR  
80 VOLTS  
Collector–Emitter Sustaining Voltage — @ 100 mA  
= 80 Vdc (Min)  
V
CEO(sus)  
100 WATTS  
Low Collector–Emitter Saturation Voltage —  
= 2.0 Vdc (Max) @ I = 4.0 Adc  
V
CE(sat)  
C
= 3.0 Vdc (Max) @ I = 8.0 Adc  
C
Monolithic Construction with Built–In Base–Emitter Shunt Resistors  
MAXIMUM RATINGS (1)  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Max  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
CASE 1–07  
TO–204AA  
(TO–3)  
V
CB  
80  
V
EB  
5.0  
Collector Current — Continuous  
Peak  
I
C
8.0  
16  
Base Current  
I
B
120  
mAdc  
Total Device Dissipation @ T = 25_C  
P
100  
0.571  
Watts  
C
D
Derate above 25_C  
W/_C  
_C  
Operating and Storage Junction Temperature  
Range  
T , T  
J
–65 to +200  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
(1) Indicates JEDEC Registered Data  
R
1.75  
_C/W  
θ
JC  
100  
80  
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
T , TEMPERATURE (°C)  
C
Figure 1. Power Derating  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 2  
2N6056/D  

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