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2N5657 PDF预览

2N5657

更新时间: 2024-11-01 22:49:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
5页 72K
描述
SILICON NPN TRANSISTOR

2N5657 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SIP包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.23
外壳连接:ISOLATED最大集电极电流 (IC):0.5 A
基于收集器的最大容量:25 pF集电极-发射极最大电压:350 V
配置:SINGLE最小直流电流增益 (hFE):5
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
功耗环境最大值:20 W最大功率耗散 (Abs):20 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):10 MHzVCEsat-Max:10 V
Base Number Matches:1

2N5657 数据手册

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2N5657  
SILICON NPN TRANSISTOR  
SGS-THOMSON PREFERRED SALESTYPE  
NPN TRANSISTOR  
DESCRIPTION  
The 2N5657 is a silicon epitaxial-base NPN  
transistor in Jedec SOT-32 plastic package. It is  
intended for use output amplifiers, low current,  
high voltage converters and AC line relays.  
1
2
3
SOT-32  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
V
375  
350  
V
6
0.5  
V
A
ICM  
Collector Peak Current  
1
A
IB  
Base Current  
Total Dissipation at Tc 25 oC  
0.25  
20  
A
Ptot  
Tstg  
Tj  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/5  
June 1997  

2N5657 替代型号

型号 品牌 替代类型 描述 数据表
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