是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SIP | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.23 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 0.5 A |
基于收集器的最大容量: | 25 pF | 集电极-发射极最大电压: | 350 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 5 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
功耗环境最大值: | 20 W | 最大功率耗散 (Abs): | 20 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 10 MHz | VCEsat-Max: | 10 V |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
TIP36C | STMICROELECTRONICS |
功能相似 |
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS | |
TIP115 | STMICROELECTRONICS |
功能相似 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | |
TIP107 | STMICROELECTRONICS |
功能相似 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
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2N5657G | ONSEMI |
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