Datasheet > 2N5660

2N5660

更新时间： 2024-11-02 05:56:27

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
3页	127K
描述
Silicon NPN Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N5660 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5660 2N5661

DESCRIPTION

·With TO-66 package

·High breakdown voltage

APPLICATIONS

·High speed switching and linear amplifier

·High-voltage operational amplifiers

·Switching regulators ,converters

·Deflection stages and high fidelity amplifers

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-66) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

250

400

200

300

UNIT

2N5660

2N5661

2N5660

2N5661

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

Emitter-base voltage

Collector current

Base current

Open collector

2.0

I_B

0.5

T_C=100℃

T_a=25℃

P_T

Total power dissipation

T_j

Junction temperature

Storage temperature

200

-65~200

℃

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

MAX

UNIT

R_{th j-C}

5.0

℃/W

12 3

中文翻译

下载PDF

与2N5660相关器件

型号	品牌	获取价格	描述	数据表
2N5660E3	MICROSEMI	获取价格	Power Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal
2N5661	SEMICOA	获取价格	Silicon NPN Transistor
2N5661	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO66
2N5661	NJSEMI	获取价格	NPN SWITCHING TRANSISTORS
2N5661	ISC	获取价格	Silicon NPN Power Transistors
2N5661	SAVANTIC	获取价格	Silicon NPN Power Transistors
2N5661	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR
2N5661E3	MICROSEMI	获取价格	Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal
2N5662	SEME-LAB	获取价格	NPN BIPOLAR POWER SWITCHING
2N5662	NJSEMI	获取价格	NPN SWITCHING TRANSISTORS