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TIP115 PDF预览

TIP115

更新时间: 2024-11-18 22:42:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率双极晶体管达林顿晶体管
页数 文件大小 规格书
6页 75K
描述
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

TIP115 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:PLASTIC, TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:8 weeks风险等级:0.83
最大集电极电流 (IC):2 A集电极-发射极最大电压:60 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):500
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP功耗环境最大值:50 W
最大功率耗散 (Abs):50 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
VCEsat-Max:2.5 VBase Number Matches:1

TIP115 数据手册

 浏览型号TIP115的Datasheet PDF文件第2页浏览型号TIP115的Datasheet PDF文件第3页浏览型号TIP115的Datasheet PDF文件第4页浏览型号TIP115的Datasheet PDF文件第5页浏览型号TIP115的Datasheet PDF文件第6页 
TIP110/112  
TIP115/117  
COMPLEMENTARY SILICON POWER  
DARLINGTON TRANSISTORS  
STMicroelectronics PREFERRED  
SALESTYPES  
COMPLEMENTARY PNP - NPN DEVICES  
MONOLITHIC DARLINGTON  
CONFIGURATION  
INTEGRATED ANTIPARALLEL  
COLLECTOR-EMITTER DIODE  
APPLICATIONS  
3
2
LINEAR AND SWITCHING INDUSTRIAL  
EQUIPMENT  
1
TO-220  
DESCRIPTION  
The TIP110  
and  
TIP112 are  
silicon  
Epitaxial-Base NPN transistors in monolithic  
Darlington configuration mounted in Jedec  
TO-220 plastic package. They are intented for  
use in medium power linear and switching  
applications.  
INTERNAL SCHEMATIC DIAGRAM  
The complementary PNP types are TIP115 and  
TIP117.  
R1 Typ.= 7K Ω  
R2 Typ.= 230  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN  
PNP  
TIP110  
TIP115  
60  
TIP112  
TIP117  
100  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
V
V
60  
100  
5
2
V
A
ICM  
Collector Peak Current  
Base Current  
4
A
IB  
50  
mA  
o
Ptot  
50  
2
W
W
oC  
oC  
Total Dissipation at Tcase 25 C  
o
Tamb 25 C  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
* For PNP types voltage and current values are negative  
1/6  
June 1999  

TIP115 替代型号

型号 品牌 替代类型 描述 数据表
TIP125 STMICROELECTRONICS

类似代替

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
TIP107 STMICROELECTRONICS

类似代替

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
TIP105 STMICROELECTRONICS

类似代替

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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TIP115-B MCC

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Transistor