Datasheet > TIP115_11

TIP115_11

更新时间： 2024-11-19 08:48:47

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管达林顿晶体管
页数	文件大小	规格书
2页	367K
描述
PNP Epitaxial Silicon Darlington Transistors

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中文翻译

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数据手册

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TIP115_11 数据手册

M C C

TIP115

TIP116

TIP117

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

High DC Current Gain : h_FE=1000 @ V_CE=4.0V, I_C=1.0A(Min.)

Low Collector-Emitter Saturation Voltage

Complementary to TIP110/111/112

Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

PNP Epitaxial

Silicon Darlington

Transistors

^·Ma^Mxi^om^isuu^rm^{e S}R^eaⁿt^si^itn^ivg^its^{y Level 1}

Symbol

Rating

Unit

TO-220

V_CEO

Collector-Emitter Voltage

TIP115

TIP116

TIP117

100

V_CBO

Collector-Base Voltage

TIP115

TIP116

TIP117

100

V_EBO

I_C

I_CP

I_B

Emitter-Base Voltage

Collector Current (DC)

5.0

2.0

4.0

2.0

^OC

Collector Current (Pulse)

Base Current (DC)

Collector Dissipation @T_A=25^OC

Collector Dissipation @T_C=25^OC

Junction Temperature

P_C

T_J,

T_STG

-55 to +150

Storage Temperature

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbl

Parameter

Min

Max

Units

OFF CHARACTERISTICS

Equivalent Circuit

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

(I _C=30mAdc, I_B=0)

TIP115

TIP116

TIP117

100

---

Vdc

I_CEO

Collector Cut-off Current

(V _CE=30Vdc, I_B=0)

(V_CE=40Vdc, I_B=0)

(V_CE=50Vdc, I_B=0)

TIP115

TIP116

TIP117

---

2.0

mAdc

I_CBO

Collector Cut-off Current

(V _CB=60Vdc, I_E=0)

1.Base

2.Collector

3.Emitter

TIP115

TIP116

TIP117

---

1.0

mAdc

R1 10 k Ω

R2 0.6 k Ω

(V _CB=80Vdc, I =0)

(V _CB=100Vdc, I_E=0)

Emitter Cut-off Current

(V_BE=5.0Vdc, I_C=0)

ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ

I_EBO

---

2.0

ꢇ ꢇ ꢇ ꢇ

INCHES

ꢀꢁꢂ

ꢂꢁꢄ

.595

.380

.160

.025

.142

.190

.110

.018

.500

.045

.100

.080

.045

.235

------

ꢂꢈꢉ

.620

.405

.190

.035

.147

.210

.130

.025

.562

.060

.120

.110

.055

.255

.050

ꢂꢁꢄ

ꢂꢈꢉ

15.75

10.29

4.82

0.89

3.73

5.33

3.30

0.64

14.27

1.52

3.04

2.79

1.39

6.48

1.27

ꢄꢆꢊꢃ

ON CHARACTERISTICS

h_FE(1)

15.11

9.65

4.06

0.64

3.61

4.83

2.79

0.46

12.70

1.14

2.54

2.04

1.14

5.97

-----

DC Current Gain

(I _C=1.0Adc, V_CE=4.0Vdc)

1000

500

---

2.5

----

Vdc

(I =2.0Adc, V_CE=4.0Vdc)

V_CE(sat)

V_BE(ON)

C_ob

Collector-Emitter Saturation Voltage

(I =2.0Adc, I_B=8.0mAdc)

Base-Emitter On Voltage

(I _C=2.0Adc,V_CE=4.0Adc)

Output Capacitance

---

2.8

200

(V _CB=10V, I_E=0, f=0.1MH z)

Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.

www.mccsemi.com

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Revision: A

2011/01/01

中文翻译

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与TIP115_11相关器件

型号	品牌	获取价格	描述	数据表
TIP115-6200	RENESAS	获取价格	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
TIP115-6255	RENESAS	获取价格	2A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP115-6258	RENESAS	获取价格	2A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP115-6263	RENESAS	获取价格	2A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP115-6265	RENESAS	获取价格	2A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP115A	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
TIP115AF	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
TIP115AK	ONSEMI	获取价格	2A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
TIP115-B	MCC	获取价格	Transistor
TIP115BA	ONSEMI	获取价格	2A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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