Datasheet > 2N5662

2N5662

更新时间： 2024-11-01 22:49:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
3页	69K
描述
NPN POWER SILICON TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N5662 数据手册

TECHNICAL DATA

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 454

Devices

Qualified Level

JAN, JANTX

JANTXV

2N5660

2N5661

2N5662

2N5663

MAXIMUM RATINGS

Ratings

2N5660 2N5661

2N5662 2N5663

Symbol

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Base Current

200

250

300

400

Vdc

Adc

V_CEO

V_CBO

V_CER

V_EBO

I_B

6.0

0.5

2.0

TO-66*

(TO-213AA)

2N5660, 2N5661

Collector Current

I_C

2N5660 2N5662

2N5661 2N5663

Total Power Dissipation

@ T_A= +25⁰C

@ T_C= +100⁰C

2.0⁽¹⁾

20⁽³⁾

1.0⁽²⁾

15⁽⁴⁾

⁰C

P_T

Operating & Storage Junction Temperature Range

-65 to +200

T_J_,T

stg

THERMAL CHARACTERISTICS

2N5660

2N5661

2N5662

2N5663

Characteristics

Symbol

Unit

TO-5*

2N5662, 2N5663

Thermal Resistance, Junction-to-Case

Junction-to-Ambient

qJC

⁰C/W

5.0

87.5

6.67

145.8

qJA

1) Derate linearly 11.4 mW/⁰C for T_A>+ 25⁰C

2) Derate linearly 5.7 mW/⁰C for T_A> +25⁰C

3) Derate linearly 200 mW/⁰C for T_C> +100⁰C

4) Derate linearly 150 mW/⁰C for T_C> +100⁰C

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_C= 25⁰C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 10 mAdc

200

300

Vdc

2N5660, 2N5662

2N5661, 2N5663

V_(BR)

CEO

Collector-Base Breakdown Voltage

250

400

Vdc

I_C= 10 mAdc, R_BE= 100W

2N5660, 2N5662

2N5661, 2N5663

V_(BR)

CER

Emitter-Base Breakdown Voltage

I_E= 10 mAdc

6.0

V_(BR)

EBO

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

Page 1 of 2

12 3

中文翻译

下载PDF

与2N5662相关器件

型号	品牌	获取价格	描述	数据表
2N5663	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR
2N5663	SEMICOA	获取价格	Silicon NPN Transistor
2N5663	NJSEMI	获取价格	NPN SWITCHING TRANSISTORS
2N5663	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO39 Metal Package
2N5663_10	SEME-LAB	获取价格	SILICON POWER NPN TRANSISTOR
2N5664	SAVANTIC	获取价格	Silicon NPN Power Transistors
2N5664	ISC	获取价格	Silicon NPN Power Transistors
2N5664	SEMICOA	获取价格	Chip Type 2C5664 Geometry 9221 Polarity NPN
2N5664	MICROSEMI	获取价格	NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455
2N5664	NJSEMI	获取价格	SILICON PLANAR NPN POWER TRANSISTORS