5秒后页面跳转
2N5661 PDF预览

2N5661

更新时间: 2024-11-02 12:50:03
品牌 Logo 应用领域
SEME-LAB 晶体晶体管装置局域网
页数 文件大小 规格书
1页 15K
描述
Bipolar NPN Device in a Hermetically sealed TO66

2N5661 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-66
包装说明:FLANGE MOUNT, O-MBFM-P2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.16
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):25
JEDEC-95代码:TO-213AAJESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):20 MHz
Base Number Matches:1

2N5661 数据手册

  
2N5661  
Dimensions in mm (inches).  
Bipolar NPN Device in a  
Hermetically sealed TO66  
Metal Package.  
6.35 (0.250)  
8.64 (0.340)  
3.68  
(0.145) rad.  
3.61 (0.142)  
4.08(0.161)  
rad.  
max.  
Bipolar NPN Device.  
VCEO = 300V  
1
2
IC = 1A  
All Semelab hermetically sealed products  
can be processed in accordance with the  
requirements of BS, CECC and JAN,  
JANTX, JANTXV and JANS specifications  
1.27 (0.050)  
1.91 (0.750)  
4.83 (0.190)  
5.33 (0.210)  
9.14 (0.360)  
min.  
TO66 (TO213AA)  
PINOUTS  
1 – Base  
2 – Emitter  
Case – Collector  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
300  
1
Units  
VCEO*  
IC(CONT)  
hFE  
V
A
@ (VCE / IC)  
25  
750  
-
ft  
20M  
Hz  
W
PD  
20  
* Maximum Working Voltage  
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.  
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab plc.  
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Generated  
1-Aug-02  

与2N5661相关器件

型号 品牌 获取价格 描述 数据表
2N5661E3 MICROSEMI

获取价格

Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal
2N5662 SEME-LAB

获取价格

NPN BIPOLAR POWER SWITCHING
2N5662 NJSEMI

获取价格

NPN SWITCHING TRANSISTORS
2N5662 SEMICOA

获取价格

Silicon NPN Transistor
2N5662 MICROSEMI

获取价格

NPN POWER SILICON TRANSISTOR
2N5662

获取价格

NPN Bipolar Power Switching Transistor
2N5663 MICROSEMI

获取价格

NPN POWER SILICON TRANSISTOR
2N5663 SEMICOA

获取价格

Silicon NPN Transistor
2N5663 NJSEMI

获取价格

NPN SWITCHING TRANSISTORS
2N5663 SEME-LAB

获取价格

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package