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2N5662 PDF预览

2N5662

更新时间: 2024-11-02 03:56:19
品牌 Logo 应用领域
SEMICOA 晶体晶体管
页数 文件大小 规格书
2页 203K
描述
Silicon NPN Transistor

2N5662 数据手册

 浏览型号2N5662的Datasheet PDF文件第2页 
2N5662  
Silicon NPN Transistor  
Data Sheet  
Description  
Applications  
General purpose  
Power Transistor  
NPN silicon transistor  
Semicoa Semiconductors offers:  
Screening and processing per MIL-PRF-19500 Appendix E  
JAN level (2N5662J)  
JANTX level (2N5662JX)  
JANTXV level (2N5662JV)  
QCI to the applicable level  
100% die visual inspection per MIL-STD-750 method  
2072 for JANTXV  
Radiation testing (total dose) upon request  
Features  
Hermetically sealed TO-5 metal can  
Also available in chip configuration  
Chip geometry 1031  
Reference document:  
MIL-PRF-19500/454  
Benefits  
Please contact Semicoa for special configurations  
Qualification Levels: JAN, JANTX, and  
JANTXV  
www.SEMICOA.com or (714) 979-1900  
Radiation testing available  
Absolute Maximum Ratings  
TC = 25°C unless otherwise specified  
Parameter  
Collector-Emitter Voltage  
Collector-Base Voltage  
Symbol  
VCEO  
VCBO  
Rating  
200  
250  
Unit  
Volts  
Volts  
Volts  
A
Emitter-Base Voltage  
VEBO  
IC  
6
Collector Current, Continuous  
2
W
Power Dissipation, TA = 25°C  
Derate linearly above 25°C  
Power Dissipation, TC = 25°C  
Derate linearly above 100°C  
Operating Junction Temperature  
Storage Temperature  
1
PT  
5.7  
mW/°C  
W
15  
PT  
150  
mW/°C  
TJ  
°C  
-65 to +200  
TSTG  
Semicoa Semiconductors, Inc.  
Copyright2002  
Rev. D  
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541  
Page 1 of 2  
www.SEMICOA.com  

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