生命周期: | Contact Manufacturer | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大集电极电流 (IC): | 10 A | 配置: | Single |
最小直流电流增益 (hFE): | 30 | 最高工作温度: | 200 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 100 W |
子类别: | Other Transistors | 表面贴装: | NO |
标称过渡频率 (fT): | 30 MHz |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N5624E3 | MICROSEMI | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL |
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2N5625 | SAVANTIC | Silicon PNP Power Transistors |
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2N5625 | JMNIC | Silicon PNP Power Transistors |
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2N5625 | MICROSEMI | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, |
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2N5625 | ISC | Silicon PNP Power Transistors |
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2N5625E3 | MICROSEMI | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, |
获取价格 |