生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.61 |
最大集电极电流 (IC): | 10 A | 配置: | Single |
最小直流电流增益 (hFE): | 70 | 最高工作温度: | 200 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 100 W |
子类别: | Other Transistors | 表面贴装: | NO |
标称过渡频率 (fT): | 40 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5626E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL | |
2N5627 | ISC |
获取价格 |
Silicon PNP Power Transistors | |
2N5627 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
2N5627 | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2N5627 | SEME-LAB |
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Bipolar PNP Device in a Hermetically sealed TO3 Metal Package | |
2N5628 | ASI |
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Transistor | |
2N5628 | JMNIC |
获取价格 |
Silicon NPN Power Transistors | |
2N5628 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
2N5628 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
2N5628E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL |