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2N5625 PDF预览

2N5625

更新时间: 2024-11-24 06:18:07
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锦美电子 - JMNIC 晶体晶体管局域网
页数 文件大小 规格书
3页 43K
描述
Silicon PNP Power Transistors

2N5625 数据手册

 浏览型号2N5625的Datasheet PDF文件第2页浏览型号2N5625的Datasheet PDF文件第3页 
Product Specification  
www.jmnic.com  
Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627  
DESCRIPTION  
·With TO-3 package  
·Excellent safe operating area  
·Low collector-emitter saturation voltage  
APPLICATIONS  
·For audio and general-purpose  
applications  
PINNING(see Fig.2)  
PIN  
DESCRIPTION  
1
Base  
2
3
Emitter  
Collector  
Fig.1 simplified outline (TO-3) and symbol  
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
60  
UNIT  
2N5621  
VCBO  
Collector-base voltage  
Open emitter  
V
2N5623/5625  
2N5627  
80  
100  
80  
2N5621  
VCEO  
Collector-emitter voltage  
Open base  
Open collector  
TC=25  
V
2N5623/5625  
2N5627  
100  
120  
5
VEBO  
IC  
Emitter-base voltage  
Collector current  
V
A
10  
PD  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
100  
150  
-65~200  
W
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
1.5  
/W  
JMnic  

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