Datasheet > 2N5629

2N5629

更新时间： 2024-11-27 06:18:11

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	112K
描述
Silicon NPN Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N5629 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5629 2N5630

DESCRIPTION

·With TO-3 package

·Complement to type 2N6029 2N6030

APPLICATIONS

·For high voltage and high power

amplifier applications

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

100

120

100

120

UNIT

2N5629

2N5630

2N5629

2N5630

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

ꢀ

Collector current-peak

Base current

5.0

P_D

T_j

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

200

-65~200

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

0.875

ꢀ/W

12 3

中文翻译

下载PDF

与2N5629相关器件

型号	品牌	获取价格	描述	数据表
2N5630	NJSEMI	获取价格	POWER TRANSISTORS COMPLEMENTARY SILICON
2N5630	CENTRAL	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
2N5630	SEME-LAB	获取价格	Bipolar NPN Device
2N5630	SAVANTIC	获取价格	Silicon NPN Power Transistors
2N5630	ISC	获取价格	Silicon NPN Power Transistors
2N5630	JMNIC	获取价格	Silicon NPN Power Transistors
2N5630	ASI	获取价格	Transistor
2N5630E3	MICROSEMI	获取价格	Power Bipolar Transistor, 16A I(C), 120V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL
2N5630PBFREE	CENTRAL	获取价格	Power Bipolar Transistor,
2N5631	ONSEMI	获取价格	POWER TRANSISTORS COMPLEMENTARY SILICON