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2N5627 PDF预览

2N5627

更新时间: 2024-11-24 06:17:39
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 119K
描述
Silicon PNP Power Transistors

2N5627 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Base Number Matches:1

2N5627 数据手册

 浏览型号2N5627的Datasheet PDF文件第2页浏览型号2N5627的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627  
DESCRIPTION  
·With TO-3 package  
·Excellent safe operating area  
·Low collector saturation voltage  
APPLICATIONS  
·For audio and general-purpose  
applications  
PINNING(see Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=)  
SYMBO
PARAMETER  
CONDITIONS  
VALU
-80  
UNIT  
2N5621  
VCBO  
Collector-base voltage  
Open emitter  
V
2N5623/5625  
2N5627  
-100  
-120  
-60  
2N5621  
VCEO  
Collector-emitter voltage  
Open base  
Open collector  
TC=25  
V
2N5623/5625  
2N5627  
-80  
-100  
-5  
VEBO  
IC  
Emitter-base voltage  
Collector current  
V
A
-10  
PD  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
100  
W
150  
Tstg  
-65~200  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
1.5  
/W  

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