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2N5626 PDF预览

2N5626

更新时间: 2024-11-24 06:18:11
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 111K
描述
Silicon NPN Power Transistors

2N5626 数据手册

 浏览型号2N5626的Datasheet PDF文件第2页浏览型号2N5626的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors 2N5622 2N5624 2N5626 2N5628  
DESCRIPTION  
·With TO-3 package  
·Excellent safe operating area  
·Low collector saturation voltage  
APPLICATIONS  
·For audio and general-purpose  
applications  
PINNING(see Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
80  
UNIT  
2N5622  
VCBO  
Collector-base voltage  
Open emitter  
V
2N5624/5626  
2N5628  
100  
120  
60  
2N5622  
VCEO  
Collector-emitter voltage  
Open base  
Open collector  
TC=25ꢀ  
V
2N5624/5626  
2N5628  
80  
100  
5
VEBO  
IC  
Emitter-base voltage  
Collector current  
V
A
W
10  
PD  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
100  
150  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
1.5  
/W  

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