是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | Reach Compliance Code: | not_compliant |
风险等级: | 5.69 | Is Samacsys: | N |
基于收集器的最大容量: | 6 pF | 集电极-发射极最大电压: | 140 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 60 |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
VCEsat-Max: | 0.25 V | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2N5550TAR | ONSEMI |
类似代替 |
小信号 NPN 双极晶体管 | |
2N5550RLRAG | ONSEMI |
类似代替 |
600mA, 140V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE, CASE 29-11, TO-226AA, 3 P | |
2N5550TA | ONSEMI |
类似代替 |
Small Signal NPN Bipolar Transistor, 2000-FNFLD |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5550TRD | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | |
2N5550TRE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | |
2N5550TRF | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | |
2N5550TRH | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | |
2N5551 | CENTRAL |
获取价格 |
Small Signal Transistors TO-92 Case (Continued) | |
2N5551 | TYSEMI |
获取价格 |
Switching and amplification in high voltage High voltage(max.180V) | |
2N5551 | KODENSHI |
获取价格 |
NPN Silicon Transistor | |
2N5551 | BWTECH |
获取价格 |
HIGH VOLTAGE SWITCHING TRANSISTOR | |
2N5551 | SECOS |
获取价格 |
NPN Silicon General Purpose Transistor | |
2N5551 | DCCOM |
获取价格 |
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR |