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2N5551 PDF预览

2N5551

更新时间: 2024-11-24 06:25:39
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页数 文件大小 规格书
6页 81K
描述
Amplifier Transistors

2N5551 数据手册

 浏览型号2N5551的Datasheet PDF文件第2页浏览型号2N5551的Datasheet PDF文件第3页浏览型号2N5551的Datasheet PDF文件第4页浏览型号2N5551的Datasheet PDF文件第5页浏览型号2N5551的Datasheet PDF文件第6页 
2N5550, 2N5551  
Preferred Device  
Amplifier Transistors  
NPN Silicon  
Features  
Pb−Free Packages are Available*  
Device Marking: Device Type, e.g., 2N5550, Date Code  
COLLECTOR  
3
2
BASE  
MAXIMUM RATINGS  
Rating  
Symbol 2N5550 2N5551  
Unit  
Vdc  
1
EMITTER  
Collector − Emitter Voltage  
Collector − Base Voltage  
Emitter − Base Voltage  
Collector Current − Continuous  
Total Device Dissipation  
V
CEO  
V
CBO  
140  
160  
160  
180  
Vdc  
V
EBO  
6.0  
Vdc  
MARKING  
DIAGRAM  
I
C
600  
mAdc  
P
D
D
@ T = 25°C  
Derate above 25°C  
625  
5.0  
mW  
mW/°C  
A
2N  
55xx  
YWW  
TO−92  
CASE 29  
STYLE 1  
Total Device Dissipation  
@ T = 25°C  
Derate above 25°C  
P
1
2
1.5  
12  
W
mW/°C  
C
3
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
55xx  
Y
WW  
Specific Device Code  
= Year  
= Work Week  
Maximumratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
ORDERING INFORMATION  
THERMAL CHARACTERISTICS  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance,  
Junction−to−Ambient  
R
q
JA  
200  
°C/W  
Preferred devices are recommended choices for future use  
and best overall value.  
Thermal Resistance,  
Junction−to−Case  
R
q
JC  
83.3  
°C/W  
Semiconductor Components Industries, LLC, 2004  
1
June, 2004 − Rev. 3  
2N5550/D  

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