2N5551

更新时间： 2024-09-23 12:20:23

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管
页数	文件大小	规格书
5页	223K
描述
NPN Silicon Transistor

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中文翻译

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数据手册

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2N5551 数据手册

2N5551

NPN Silicon Transistor

Descriptions

• General purpose amplifier

PIN Connection

• High voltage application

Features

• High collector breakdown voltage :

V_CBO= 180V, V_CEO= 160V

• Low collector saturation voltage :

_CE(sat)=0.5V(MAX.)

TO-92

• Complementary pair with 2N5401

Ordering Information

Type NO.

Marking

Package Code

2N5551

TO-92

Absolute maximum ratings

(Ta=25°C)

Characteristic

Symbol

Ratings

180

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

V_CBO

V_CEO

V_EBO

I_C

160

600

°C

Collector dissipation

Junction temperature

Storage temperature

P_C

625

T_j

150

T_stg

-55~150

°C

KSD-T0A034-000

12 3 4 5

中文翻译

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