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2N5551 PDF预览

2N5551

更新时间: 2024-11-26 23:16:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器晶体管
页数 文件大小 规格书
12页 501K
描述
NPN General Purpose Amplifier

2N5551 数据手册

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MMBT5551  
2N5551  
C
E
TO-92  
C
B
B
SOT-23  
Mark: 3S  
E
NPN General Purpose Amplifier  
This device is designed for general purpose high voltage amplifiers  
and gas discharge display driving. Sourced from Process 16.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
160  
180  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
6.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
600  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5551  
*MMBT5551  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
350  
2.8  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
83.3  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
200  
357  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
2N5551/MMBT5551 Rev A  
2000 Fairchild Semiconductor International  

2N5551 替代型号

型号 品牌 替代类型 描述 数据表
2N5551G ONSEMI

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