2N5551

更新时间： 2024-11-26 23:16:11

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体放大器晶体管
页数	文件大小	规格书
6页	191K
描述
Amplifier Transistors

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2N5551 数据手册

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SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

*Motorola Preferred Device

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol 2N5550 2N5551

Unit

Vdc

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

CEO

CBO

EBO

140

160

180

Vdc

6.0

Vdc

Collector Current — Continuous

600

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(1)

Collector–Emitter Breakdown Voltage

Vdc

(BR)CEO

(I = 1.0 mAdc, I = 0)

2N5550

2N5551

140

160

—

Collector–Base Breakdown Voltage

(I = 100 µAdc, I = 0 )

Vdc

(BR)CBO

2N5550

2N5551

160

180

—

Emitter–Base Breakdown Voltage

(I = 10 µAdc, I = 0)

6.0

—

(BR)EBO

Collector Cutoff Current

CBO

= 100 Vdc, I = 0)

2N5550

2N5551

2N5550

2N5551

—

100

nAdc

= 120 Vdc, I = 0)

= 100 Vdc, I = 0, T = 100°C)

µAdc

= 120 Vdc, I = 0, T = 100°C)

Emitter Cutoff Current

(V = 4.0 Vdc, I = 0)

—

nAdc

EBO

1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4 5 6

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