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2N5551 PDF预览

2N5551

更新时间: 2024-11-24 12:39:47
品牌 Logo 应用领域
韩国光电子 - AUK 晶体放大器晶体管
页数 文件大小 规格书
3页 201K
描述
NPN Silicon Transistor (General purpose amplifier High voltage application)

2N5551 数据手册

 浏览型号2N5551的Datasheet PDF文件第2页浏览型号2N5551的Datasheet PDF文件第3页 
2N5551  
Semiconductor  
NPN Silicon Transistor  
Descriptions  
General purpose amplifier  
High voltage application  
Features  
High collector breakdown voltage : VCBO = 180V, VCEO = 160V  
Low collector saturation voltage : VCE(sat)=0.5V(MAX.)  
Complementary pair with 2N5401  
Ordering Information  
Type NO.  
Marking  
Package Code  
TO-92  
2N5551  
2N5551  
Outline Dimensions  
unit : mm  
3.45±0.1  
2.25±0.1  
4.5±0.1  
0.4±0.02  
2.06±0.1  
1.27 Typ.  
2.54 Typ.  
1 2 3  
PIN Connections  
1. Emitter  
2. Base  
3. Collector  
KST-9041-000  
1

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