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2N5551 PDF预览

2N5551

更新时间: 2024-09-24 14:55:31
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
5页 485K
描述
TO-92

2N5551 数据手册

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IANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
TO-92 Plastic-Encapsulate Transistors  
TO – 92  
2N5551 TRANSISTOR (NPN)  
1. EMITTER  
2. BASE  
FEATURES  
General Purpose Switching Application  
3. COLLECTOR  
ꢀꢁꢂꢃꢄꢅꢆ  
Equivalent Circuit  
ꢅꢍꢎꢎꢎꢏꢖ&ꢌ"ꢓ!ꢌꢀ!ꢒꢔꢌꢀ  
2 N  
ꢑꢒꢈꢓꢔꢀꢔꢒꢕꢖꢗꢘꢌꢌꢙꢀ ꢒꢈꢔꢓꢙꢚꢀ!ꢒ ꢋꢒꢇꢙꢔꢀꢔꢌ"ꢓ!ꢌ#ꢀ  
ꢇ ꢇ ꢇ ꢈ  
ꢀꢓ'ꢀꢙꢒꢙꢌ#ꢕ(ꢌꢀꢙꢒꢘ ꢊꢈꢀꢔꢌ"ꢓ!ꢌ  
ꢉ ꢉ ꢉ  
Z
Z=Rank of hFE  
%%%ꢀ&ꢁꢂꢃ  
1
ORDERING INFORMATION  
Part Number  
Package  
ꢀꢁꢂꢃꢄꢅꢀ  
ꢀꢁꢂꢃꢄꢅꢀ  
Packing Method  
ꢆꢇꢈꢉꢀ  
Pack Quantity  
ꢅꢍꢎꢎꢎꢏ  
1000pcs/Bag  
ꢃꢁꢐ  
ꢅꢍꢎꢎꢎꢏ  
ꢋꢌꢀ  
2000pcs/Box  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Value  
180  
Unit  
V
V
Collector-Emitter Voltage  
160  
Emitter-Base Voltage  
6
V
A
Collector Current  
0.6  
mW  
625  
PC  
Collector Power Dissipation  
R%JA  
TJ,Tstg  
Thermal Resistance From Junction To Ambient  
Operation Junction and Storage Temperature Range  
200  
/W  
-55~+150  
www.jscj-elec.com  
1
Rev. - 2.0  

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