2N5551

更新时间： 2024-09-22 23:16:11

品牌	Logo	应用领域
TRSYS		晶体晶体管
页数	文件大小	规格书
2页	67K
描述
TO-92 Plastic-Encapsulated Transistors

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中文翻译

获取价格

数据手册

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2N5551 数据手册

Transys

Electronics

TO-92 Plastic-Encapsulated Transistors

2N5551 TRANSISTOR (NPN)

TO-92

FEATURES

Power dissipation

P_CM: 0.625 W (Tamb=25℃)

1. EMITTER

2. BASE

Collector current

I_CM: 0.6

3. COLLECTOR

Collector-base voltage

V_(BR)CBO: 180

1 2 3

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

MIN

180

160

TYP

MAX

UNIT

Collector-base breakdown voltage

Ic= 100 µA, I_E=0

Ic= 100 µA, I_B=0

Collector-emitter

voltage

breakdown

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_E= 100 µA, I_C=0

V_CB= 180 V, I_E=0

0.1

µA

I_EBO

V_EB= 4 V, I_C=0

h_FE(1)

V_CE= 5 V, I_C= 1 mA

V_CE= 5 V, I_C= 10 mA

V_CE= 5 V, I_C= 50 mA

I_C= 50 mA, I_B= 5 mA

DC current gain

h_FE(2)

250

h_FE(3)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CEsat

V_BEsat

0.5

Transition frequency

MHz

f_T

V_CE= 5 V,I_C= 10 mA, f =30MHz

CLASSIFICATION OF h_FE(2)

Rank

80-160

120-180

150-250

Range

中文翻译

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