Datasheet > 1SS345

1SS345

更新时间： 2024-11-11 06:21:59

品牌	Logo	应用领域
科信 - KEXIN		肖特基二极管
页数	文件大小	规格书
1页	35K
描述
Sillicon Epitaxial Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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1SS345 数据手册

SMD Type

Diodes

Sillicon Epitaxial Schottky Barrier Diode

1SS345

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Small interterminal capacitance (C=0.45pF typ).

Low forward voltage and excellent detection efficiency(VF=0.35V max)

High breakdown voltage (VR=55V).

+0.1

0.95

-0.1

+0.05

0.1

-0.01

Very small-sized package permitting the 1SS345-applied sets to be made small and slim.

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Reverse Voltage

Symbol

Value

Unit

V^R

I^F

Forward Current

Power Dissipation

Junction Temperature

Storage temperature

Reverse Burning

150

T^j

125

-55 to +125

Tstg

C = 25 pF

erg

Electrical Characteristics Ta = 25

Parameter

Forward Voltage

Symbol

Conditions

Min

Typ

Max

0.35

Unit

V^R

I^F

IF = 1 mA

VF = 1 V

Forward Current

Reverse Voltage

V^R

IR = 100

Reverse Current

VR = 40 V

Interterminal Capacitance

V^R= 10 V, f = 1 MHz

0.45

Marking

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与1SS345相关器件

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