Datasheet > 1SS349_07

1SS349_07

更新时间： 2024-02-09 20:47:00

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
3页	189K
描述
Ultra High Speed Switching Application

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中文翻译

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数据手册

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1SS349_07 数据手册

1SS349

TOSHIBA Diode Silicon Epitaxial Schottky Planar Type

1SS349

Ultra High Speed Switching Application

Unit: mm

z Low forward voltage

z Low reverse current

z Small package

: V

= 0.49V (typ.)

F (3)

: I = 50μA (max)

: SC−59

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Power dissipation

3000

1000

200

°C

Junction temperature

125

Storage temperature

−55∼125

−40∼100

°C

stg

opr

JEDEC

TD−236MOD

Operating Temperature

°C

EIAJ

SC−59

1−3G1B

TOSHIBA

Weight: 0.012g

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 100mA

Min

Typ.

Max

Unit

0.34

0.42

0.49

―

F (1)

Forward voltage

= 500mA

= 1000mA

= 20V

―

F (2)

0.55

―

F (3)

Reverse current

μA

―

R (1)

Total capacitance

= 0, f = 1MHz

250

―

Marking

2007-11-01

12 3

中文翻译

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