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1SS352(TH3NDS,F) PDF预览

1SS352(TH3NDS,F)

更新时间: 2024-11-12 07:26:39
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 337K
描述
Rectifier Diode, 1 Element, 0.1A, 85V V(RRM), Silicon

1SS352(TH3NDS,F) 数据手册

 浏览型号1SS352(TH3NDS,F)的Datasheet PDF文件第2页浏览型号1SS352(TH3NDS,F)的Datasheet PDF文件第3页 
1SS352  
TOSHIBA Diode Silicon Epitaxial Planar Type  
1SS352  
Ultra High Speed Switching Application  
Unit: mm  
AEC-Q101 Qualified (Note1)  
Small package  
Low forward voltage  
: V = 0.98V (typ.)  
F (3)  
Fast reverse recovery time: t = 1.6ns (typ.)  
rr  
Small total capacitance  
: C = 0.5pF (typ.)  
T
Note1: For detail information, please contact to our sales.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse voltage  
Reverse voltage  
V
85  
80  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
Power dissipation  
I
200  
mA  
mA  
A
FM  
I
100  
O
I
1
FSM  
P
200 (*)  
125  
mW  
°C  
°C  
JEDEC  
Junction temperature  
T
j
JEITA  
Storage temperature  
T
55 to 125  
stg  
TOSHIBA  
1-1E1A  
Weight: 0.004g (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
(*): Mounted on a glass epoxy circuit board of 20 × 20mm, pad dimension of 4 × 4mm.  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
0.62  
0.75  
0.98  
F (1)  
F (2)  
F (3)  
R (1)  
R (2)  
F
F
F
Forward voltage  
= 10mA  
= 100mA  
1.20  
0.1  
0.5  
3.0  
4.0  
I
I
V
V
V
= 30V  
R
R
R
μA  
Reverse current  
= 80V  
Total capacitance  
C
T
= 0, f = 1MH  
0.5  
1.6  
pF  
ns  
z
Reverse recovery time  
t
I = 10mA, Fig.1  
F
rr  
Start of commercial production  
1989-10  
1
2015-01-09  

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