1SS352
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS352
Ultra High Speed Switching Application
Unit: mm
AEC-Q101 Qualified (Note1)
Small package
Low forward voltage
: V = 0.98V (typ.)
F (3)
Fast reverse recovery time: t = 1.6ns (typ.)
rr
Small total capacitance
: C = 0.5pF (typ.)
T
Note1: For detail information, please contact to our sales.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
V
85
80
V
V
RM
V
R
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
I
200
mA
mA
A
FM
I
100
O
I
1
FSM
P
200 (*)
125
mW
°C
°C
JEDEC
―
―
Junction temperature
T
j
JEITA
Storage temperature
T
−55 to 125
stg
TOSHIBA
1-1E1A
Weight: 0.004g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*): Mounted on a glass epoxy circuit board of 20 × 20mm, pad dimension of 4 × 4mm.
Electrical Characteristics (Ta = 25°C)
Test
Circuit
Characteristic
Symbol
Test Condition
= 1mA
Min
Typ.
Max
Unit
V
V
V
V
―
I
I
I
―
―
―
―
―
―
―
0.62
0.75
0.98
―
―
―
F (1)
F (2)
F (3)
R (1)
R (2)
F
F
F
Forward voltage
―
= 10mA
―
= 100mA
1.20
0.1
0.5
3.0
4.0
I
I
―
V
V
V
= 30V
R
R
R
μA
Reverse current
―
= 80V
―
Total capacitance
C
T
―
= 0, f = 1MH
0.5
1.6
pF
ns
z
Reverse recovery time
t
―
I = 10mA, Fig.1
F
rr
Start of commercial production
1989-10
1
2015-01-09