Datasheet > 1SS352

1SS352

更新时间： 2024-11-11 06:20:43

品牌	Logo	应用领域
商升特 - SEMTECH		二极管测试光电二极管局域网快速恢复二极管
页数	文件大小	规格书
3页	257K
描述
SILICON EPITAXIAL PLANAR DIODE

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中文翻译

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数据手册

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1SS352 数据手册

1SS352

SILICON EPITAXIAL PLANAR DIODE

Features

PINNING

• Low forward voltage

• Fast Reverse Recovery Time

• Small Total Capacitance

DESCRIPTION

Cathode

Anode

Top View

Marking Code: "W2"

Application

Simplified outline SOD-323 and symbol

• Ultra high speed switching

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Maximum (Peak) Reverse Voltage

Reverse Voltage

V_RM

V_R

Average Forward Current

Maximum (Peak) Forward Current

Surge Forward Current (10 ms)

Power Dissipation

I_O

100

I_FM

I_FSM

P_tot

T_j

200

Junction Temperature

125

Storage Temperature Range

T_stg

- 55 to + 125

Characteristics at T_a= 25 C

Symbol

V_F

Parameter

Max.

1.2

Unit

Forward Voltage

at I_F= 100 mA

Reverse Current

at V_R= 30 V

at V_R= 80 V

I_R

0.1

0.5

µA

Total Capacitance

at f = 1 MHz

C_T

t_rr

Reverse Recovery Time

at I_F= 10 mA

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 07/04/2009

12 3

中文翻译

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