Datasheet > 1SS348_07

1SS348_07

更新时间： 2024-09-24 03:54:59

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
3页	183K
描述
Low Voltage High Speed Switching

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中文翻译

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数据手册

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1SS348_07 数据手册

1SS348

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS348

Low Voltage High Speed Switching

Unit: mm

z Low forward voltage

z Low reverse current

z Small package

: V

= 0.56V (typ.)

F (3)

: I = 5μA (max)

: SC-59

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Power dissipation

300

°C

100

200

Junction temperature

125

Storage temperature

−55~125

−40~100

°C

stg

opr

Operating Temperature

°C

JEDEC

TD-236MOD

EIAJ

SC-59

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

Weight: 0.012g

1-3G1B

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

―

0.26

0.34

0.56

―

F (1)

F (2)

F (3)

R (1)

Forward voltage

―

= 10mA

―

= 100mA

0.70

Reverse current

―

= 80V

μA

Total capacitance

―

= 0, f = 1MHz

100

Marking

2007-11-01

12 3

中文翻译

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