Datasheet > 1SS336_07

1SS336_07

更新时间： 2024-11-11 03:54:59

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
3页	258K
描述
Ultra High Speed Switching Application

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1SS336_07 数据手册

1SS336

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS336

Ultra High Speed Switching Application

Unit: mm

z Small package

: SC-59

: V

z Low forward voltage

= 0.84V (typ.)

F (3)

z Fast reverse recovery time: t = 7ns (typ.)

z Small total capacitance

: C = 7pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

Power dissipation

600 *

200 *

6 *

FSM

150

°C

Junction temperature

150

JEDEC

TD-236MOD

Storage temperature

−55~150

stg

EIAJ

SC-59

TOSHIBA

Weight: 0.012g

1-3G1E

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Unit rating. Total rating = unit rating × 1.5

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 10mA

Min

Typ.

Max

Unit

―

0.64

0.78

0.84

―

F (1)

F (2)

F (3)

R (1)

R (2)

Forward voltage

―

= 100mA

= 200mA

―

1.2

―

= 30V

= 80V

0.25

0.50

Reverse current

μA

―

Total capacitance

―

= 0, f = 1MHz

―

Reverse recovery time

= 30mA, Fig.1

2007-11-01

12 3

中文翻译

下载PDF

与1SS336_07相关器件

型号	品牌	获取价格	描述	数据表
1SS336TE85L	TOSHIBA	获取价格	DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode
1SS336TE85L2	TOSHIBA	获取价格	DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode
1SS337	TOSHIBA	获取价格	DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
1SS337	TYSEMI	获取价格	Small package Low forward voltage: VF3 = 0.88V(Typ). Small total capacitance:CT = 1.6pF(Ty
1SS337	KEXIN	获取价格	ULTRA HIGH SPEED SWITCHING APPLICATION
1SS337_07	TOSHIBA	获取价格	Ultra High Speed Switching Application
1SS337TE85L	TOSHIBA	获取价格	DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode
1SS337TE85R	TOSHIBA	获取价格	DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode
1SS337TE85R2	TOSHIBA	获取价格	DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode
1SS344	KEXIN	获取价格	ULTRA HIGH SPEED SWITCHING APPLICATION