Datasheet > 1SS336_07

1SS336_07

更新时间： 2024-01-10 10:49:35

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
3页	258K
描述
Ultra High Speed Switching Application

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中文翻译

获取价格

数据手册

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1SS336_07 数据手册

1SS336

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS336

Ultra High Speed Switching Application

Unit: mm

z Small package

: SC-59

: V

z Low forward voltage

= 0.84V (typ.)

F (3)

z Fast reverse recovery time: t = 7ns (typ.)

z Small total capacitance

: C = 7pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

Power dissipation

600 *

200 *

6 *

FSM

150

°C

Junction temperature

150

JEDEC

TD-236MOD

Storage temperature

−55~150

stg

EIAJ

SC-59

TOSHIBA

Weight: 0.012g

1-3G1E

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Unit rating. Total rating = unit rating × 1.5

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 10mA

Min

Typ.

Max

Unit

―

0.64

0.78

0.84

―

F (1)

F (2)

F (3)

R (1)

R (2)

Forward voltage

―

= 100mA

= 200mA

―

1.2

―

= 30V

= 80V

0.25

0.50

Reverse current

μA

―

Total capacitance

―

= 0, f = 1MHz

―

Reverse recovery time

= 30mA, Fig.1

2007-11-01

12 3

中文翻译

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