Datasheet > 1SS344_07

1SS344_07

更新时间： 2024-11-11 03:54:59

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
3页	183K
描述
Ultra High Speed Switching Application

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1SS344_07 数据手册

1SS344

TOSHIBA Diode Silicon Epitaxial Schottky Planar Type

1SS344

Ultra High Speed Switching Application

Unit: mm

z Low forward voltage

: V

= 0.50V (typ.)

F (3)

z Fast reverse recovery time : t = 20ns (typ.)

z High average forward current : I = 0.5A (max)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

Power dissipation

1500

500

FSM

200

°C

Junction temperature

125

Storage temperature

−55~125

−40~100

stg

opr

JEDEC

TD-236MOD

Operating Temperature

EIAJ

SC-59

1-3G1B

TOSHIBA

Weight: 0.012g

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 10mA

Min

Typ.

Max

Unit

―

0.30

0.38

0.50

―

F (1)

F (2)

F (3)

R (1)

R (2)

Forward voltage

―

= 100mA

= 500mA

―

0.55

―

= 10V

Reverse current

μA

―

= 20V

―

100

―

Total capacitance

―

= 0, f = 1MHz

120

Reverse recovery time

―

= 50mA, (Fig.1)

―

2007-11-01

12 3

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