Datasheet > 1SS344_07

1SS344_07

更新时间： 2024-09-24 03:54:59

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
3页	183K
描述
Ultra High Speed Switching Application

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1SS344_07 数据手册

1SS344

TOSHIBA Diode Silicon Epitaxial Schottky Planar Type

1SS344

Ultra High Speed Switching Application

Unit: mm

z Low forward voltage

: V

= 0.50V (typ.)

F (3)

z Fast reverse recovery time : t = 20ns (typ.)

z High average forward current : I = 0.5A (max)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

Power dissipation

1500

500

FSM

200

°C

Junction temperature

125

Storage temperature

−55~125

−40~100

stg

opr

JEDEC

TD-236MOD

Operating Temperature

EIAJ

SC-59

1-3G1B

TOSHIBA

Weight: 0.012g

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 10mA

Min

Typ.

Max

Unit

―

0.30

0.38

0.50

―

F (1)

F (2)

F (3)

R (1)

R (2)

Forward voltage

―

= 100mA

= 500mA

―

0.55

―

= 10V

Reverse current

μA

―

= 20V

―

100

―

Total capacitance

―

= 0, f = 1MHz

120

Reverse recovery time

―

= 50mA, (Fig.1)

―

2007-11-01

12 3

中文翻译

下载PDF

与1SS344_07相关器件

型号	品牌	获取价格	描述	数据表
1SS344-T1	WTE	获取价格	Rectifier Diode, Schottky, 1 Element, 0.5A, 20V V(RRM), Silicon, PLASTIC PACKAGE-3
1SS344TE85L	TOSHIBA	获取价格	DIODE 0.5 A, SILICON, SIGNAL DIODE, Signal Diode
1SS344TE85L2	TOSHIBA	获取价格	DIODE 0.5 A, SILICON, SIGNAL DIODE, Signal Diode
1SS344TE85R	TOSHIBA	获取价格	DIODE 0.5 A, SILICON, SIGNAL DIODE, Signal Diode
1SS345	KEXIN	获取价格	Sillicon Epitaxial Schottky Barrier Diode
1SS345	SANYO	获取价格	UHF Detector, Mixer Applications
1SS345	TYSEMI	获取价格	Small interterminal capacitance (C=0.45pF typ). High breakdown voltage (VR=55V).
1SS348	TYSEMI	获取价格	Small package Low forward voltage: VF(3) = 0.56V(Typ). Low voltage current: :IR = 5A(Max).
1SS348	TOSHIBA	获取价格	DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
1SS348	KEXIN	获取价格	LOW VOLTAGE HIGH SPEED SWITCHING