1SS344
TOSHIBA Diode Silicon Epitaxial Schottky Planar Type
1SS344
Ultra High Speed Switching Application
Unit: mm
z Low forward voltage
: V
= 0.50V (typ.)
F (3)
z Fast reverse recovery time : t = 20ns (typ.)
rr
z High average forward current : I = 0.5A (max)
O
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
V
25
20
V
V
RM
V
R
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
I
1500
500
mA
mA
A
FM
I
O
I
5
FSM
P
200
mW
°C
°C
°C
Junction temperature
T
j
125
Storage temperature
T
−55~125
−40~100
stg
opr
JEDEC
TD-236MOD
Operating Temperature
T
JEITA
SC-59
1-3G1B
TOSHIBA
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.012g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Test
Circuit
Characteristic
Symbol
Test Condition
= 10mA
Min
Typ.
Max
Unit
V
V
V
V
―
I
I
I
―
―
―
―
―
―
―
0.30
0.38
0.50
―
―
―
F (1)
F (2)
F (3)
R (1)
R (2)
F
F
F
Forward voltage
―
= 100mA
= 500mA
―
0.55
20
I
I
―
V
V
V
= 10V
R
R
R
Reverse current
μA
―
= 20V
―
100
―
Total capacitance
C
T
―
= 0, f = 1MHz
120
20
pF
ns
Reverse recovery time
t
―
I
= 50mA, (Fig.1)
F
―
rr
1
2007-11-01