Datasheet > 1SS314TPH3

1SS314TPH3

更新时间： 2024-11-11 15:26:43

品牌	Logo	应用领域
东芝 - TOSHIBA		光电二极管
页数	文件大小	规格书
3页	130K
描述
DIODE SILICON, VHF BAND, MIXER DIODE, Microwave Mixer Diode

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1SS314TPH3 技术参数

生命周期：	Not Recommended	包装说明：	R-PDSO-G2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.60	风险等级：	5.69
最小击穿电压：	30 V	配置：	SINGLE
最大二极管电容：	1.2 pF	二极管元件材料：	SILICON
二极管类型：	MIXER DIODE	最大正向电压 (VF)：	0.85 V
频带：	VERY HIGH FREQUENCY	JESD-30 代码：	R-PDSO-G2
元件数量：	1	端子数量：	2
最高工作温度：	125 °C	最大输出电流：	100 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	认证状态：	Not Qualified
最大反向电流：	0.1 µA	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
Base Number Matches：	1

1SS314TPH3 数据手册

1SS314

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS314

VHF Tuner Band Switch Applications

Unit: mm

•

Small package.

Small total capacitance: C = 1.2 pF (max)

Low series resistance: r = 0.5 Ω (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Rating

Unit

100

Forward current

°C

Junction temperature

Storage temperature range

125

stg

−55~125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

TOSHIBA

1-1E1A

Weight: 0.004 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Forward voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 2 mA

⎯

0.85

0.1

⎯

μA

Reverse current

Reverse voltage

Total capacitance

Series resistance

V = 15 V

= 1 μA

⎯

= 6 V, f = 1 MHz

0.7

0.5

1.2

0.9

= 2 mA, f = 100 MHz

Marking

2007-11-01

12 3

中文翻译

下载PDF

与1SS314TPH3相关器件

型号	品牌	获取价格	描述	数据表
1SS314TPHR4	TOSHIBA	获取价格	DIODE SILICON, VHF BAND, MIXER DIODE, Microwave Mixer Diode
1SS314WT	SEMTECH	获取价格	SILICON EPITAXIAL PLANAR DIODE
1SS314WT	SWST	获取价格	波段开关管
1SS315	TYSEMI	获取价格	Maximum (Peak) Reverse Voltage VRM 5 V Forward Current IF 30 mA
1SS315	KEXIN	获取价格	UHF BAND MIXER APPLICATIONS
1SS315	SEMTECH	获取价格	SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
1SS315	TOSHIBA	获取价格	DIODE (UHF BAND MIXER APPLICATIONS)
1SS315(TPH3,F)	TOSHIBA	获取价格	MIXER DIODE,UMD2VAR
1SS315(TPH3F)	TOSHIBA	获取价格	Mixer Diode
1SS315_07	TOSHIBA	获取价格	UHF Band Mixer Applications