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1SS314TPH2 PDF预览

1SS314TPH2

更新时间: 2024-11-17 15:26:43
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管
页数 文件大小 规格书
3页 130K
描述
DIODE SILICON, VHF BAND, MIXER DIODE, Microwave Mixer Diode

1SS314TPH2 技术参数

生命周期:Not Recommended包装说明:R-PDSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.60风险等级:5.71
最小击穿电压:30 V配置:SINGLE
最大二极管电容:1.2 pF二极管元件材料:SILICON
二极管类型:MIXER DIODE最大正向电压 (VF):0.85 V
频带:VERY HIGH FREQUENCYJESD-30 代码:R-PDSO-G2
元件数量:1端子数量:2
最高工作温度:125 °C最大输出电流:100 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大反向电流:0.1 µA表面贴装:YES
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

1SS314TPH2 数据手册

 浏览型号1SS314TPH2的Datasheet PDF文件第2页浏览型号1SS314TPH2的Datasheet PDF文件第3页 
1SS314  
TOSHIBA Diode Silicon Epitaxial Planar Type  
1SS314  
VHF Tuner Band Switch Applications  
Unit: mm  
Small package.  
Small total capacitance: C = 1.2 pF (max)  
T
Low series resistance: r = 0.5 (typ.)  
s
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Rating  
Unit  
V
30  
100  
V
R
Forward current  
I
mA  
°C  
°C  
F
Junction temperature  
Storage temperature range  
T
j
125  
T
stg  
55~125  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
1-1E1A  
Weight: 0.004 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Forward voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
= 2 mA  
F
30  
0.85  
0.1  
V
μA  
V
F
Reverse current  
Reverse voltage  
Total capacitance  
Series resistance  
I
V = 15 V  
R
R
V
I
= 1 μA  
R
R
C
V
= 6 V, f = 1 MHz  
R
0.7  
0.5  
1.2  
0.9  
pF  
Ω
T
r
s
I
= 2 mA, f = 100 MHz  
F
Marking  
1
2007-11-01  

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