5秒后页面跳转
1SS314TPH2 PDF预览

1SS314TPH2

更新时间: 2024-01-28 01:42:16
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管
页数 文件大小 规格书
3页 130K
描述
DIODE SILICON, VHF BAND, MIXER DIODE, Microwave Mixer Diode

1SS314TPH2 技术参数

生命周期:Not Recommended包装说明:R-PDSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.60风险等级:5.71
最小击穿电压:30 V配置:SINGLE
最大二极管电容:1.2 pF二极管元件材料:SILICON
二极管类型:MIXER DIODE最大正向电压 (VF):0.85 V
频带:VERY HIGH FREQUENCYJESD-30 代码:R-PDSO-G2
元件数量:1端子数量:2
最高工作温度:125 °C最大输出电流:100 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大反向电流:0.1 µA表面贴装:YES
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

1SS314TPH2 数据手册

 浏览型号1SS314TPH2的Datasheet PDF文件第2页浏览型号1SS314TPH2的Datasheet PDF文件第3页 
1SS314  
TOSHIBA Diode Silicon Epitaxial Planar Type  
1SS314  
VHF Tuner Band Switch Applications  
Unit: mm  
Small package.  
Small total capacitance: C = 1.2 pF (max)  
T
Low series resistance: r = 0.5 (typ.)  
s
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Rating  
Unit  
V
30  
100  
V
R
Forward current  
I
mA  
°C  
°C  
F
Junction temperature  
Storage temperature range  
T
j
125  
T
stg  
55~125  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
1-1E1A  
Weight: 0.004 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Forward voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
= 2 mA  
F
30  
0.85  
0.1  
V
μA  
V
F
Reverse current  
Reverse voltage  
Total capacitance  
Series resistance  
I
V = 15 V  
R
R
V
I
= 1 μA  
R
R
C
V
= 6 V, f = 1 MHz  
R
0.7  
0.5  
1.2  
0.9  
pF  
Ω
T
r
s
I
= 2 mA, f = 100 MHz  
F
Marking  
1
2007-11-01  

与1SS314TPH2相关器件

型号 品牌 获取价格 描述 数据表
1SS314TPH3 TOSHIBA

获取价格

DIODE SILICON, VHF BAND, MIXER DIODE, Microwave Mixer Diode
1SS314TPHR4 TOSHIBA

获取价格

DIODE SILICON, VHF BAND, MIXER DIODE, Microwave Mixer Diode
1SS314WT SEMTECH

获取价格

SILICON EPITAXIAL PLANAR DIODE
1SS314WT SWST

获取价格

波段开关管
1SS315 TYSEMI

获取价格

Maximum (Peak) Reverse Voltage VRM 5 V Forward Current IF 30 mA
1SS315 KEXIN

获取价格

UHF BAND MIXER APPLICATIONS
1SS315 SEMTECH

获取价格

SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
1SS315 TOSHIBA

获取价格

DIODE (UHF BAND MIXER APPLICATIONS)
1SS315(TPH3,F) TOSHIBA

获取价格

MIXER DIODE,UMD2VAR
1SS315(TPH3F) TOSHIBA

获取价格

Mixer Diode