Datasheet > 1SS314(TPH3,F)

1SS314(TPH3,F)

更新时间： 2024-11-17 14:46:11

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
3页	134K
描述
RECTIFIER DIODE,30V V(RRM),UMD2VAR

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中文翻译

获取价格

技术参数
数据手册

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1SS314(TPH3,F) 技术参数

是否Rohs认证：	符合	生命周期：	Not Recommended
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.70	风险等级：	8.44
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.85 V	元件数量：	1
最高工作温度：	125 °C	最大输出电流：	0.1 A
最大重复峰值反向电压：	30 V	子类别：	Rectifier Diodes
表面贴装：	YES	Base Number Matches：	1

1SS314(TPH3,F) 数据手册

1SS314

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS314

VHF Tuner Band Switch Applications

Unit: mm

•

Small package.

Small total capacitance: C = 1.2 pF (max)

Low series resistance: r = 0.5 Ω (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Rating

Unit

100

Forward current

°C

Junction temperature

Storage temperature range

125

stg

−55~125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

TOSHIBA

1-1E1A

Weight: 0.004 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Forward voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 2 mA

⎯

0.85

0.1

⎯

μA

Reverse current

Reverse voltage

Total capacitance

Series resistance

V = 15 V

= 1 μA

⎯

= 6 V, f = 1 MHz

0.7

0.5

1.2

0.9

= 2 mA, f = 100 MHz

Marking

2007-11-01

12 3

中文翻译

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