Datasheet > 1SS193

1SS193

更新时间： 2024-09-27 17:15:27

品牌	Logo	应用领域
友台半导体 - UMW		开关二极管
页数	文件大小	规格书
3页	439K
描述
开关二极管

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1SS193 数据手册

UMW

UMW 1SS193

SOT-23 Plastic-Encapsulate Diodes

1SS193 Switching Diodes

FEATURES:

● LOW Forward Voltage

● Fast Reverse Recovery Time

MARKING:

Solid dot = Green molding compound device, if none,the normal device.

Maximum ratings (@Ta=25℃)

Parameter

Non-Repetitive Peak Reverse Voltage

DC Blocking Voltage

Symbol

VRM

Limit

Unit

IFM

300

Forward Continuous Current

100

Average Rectified Output Current

Non-Repetitive Peak Forward Surge Current @t=8.3ms

Power Dissipation

IFSM

2.0

150

℃/W

℃

RθJA

833

Thermal Resistance from Junction to Ambient

Junction Temperature

150

TSTG

-55~+150

Storage Temperature Range

℃

Electrical Characteristics (@Ta=25℃)

Parameter

Symbol

Test Condition

Min

Typ

Max Unit

V(BR)

IR=100μA

Reverse breakdown voltage

VF1

VF2

VF3

IR1

IR2

IF=1mA

0.61

0.74

0.92

IF=10mA

Forward voltage

IF=100mA

1.2

0.1

0.5

3.0

4.0

VR=30V

Reverse current

VR=80V

VR=0V,f=1MHz

IF=IR=10mA,Irr=0.1×IR

Capacitance between terminal

Reverse recovery time

t r r

1.6

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