生命周期: | Transferred | 包装说明: | HERMETIC SEALED, GLASS, D-5D, 2 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.59 |
其他特性: | METALLURGICALLY BONDED | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | O-LALF-W2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最大输出电流: | 0.3 A |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 75 V | 最大反向恢复时间: | 0.005 µs |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N6642578E | ETC |
获取价格 |
SIGNAL OR COMPUTER DIODE | |
1N6642CSM | SEME-LAB |
获取价格 |
SWITCHING DIODE IN A CERAMIC SURFACE MOUNT | |
1N6642D1A | SEME-LAB |
获取价格 |
SILICON EPITAXIAL PLANAR DIODE | |
1N6642D2A | SEME-LAB |
获取价格 |
SILICON EPITAXIAL PLANAR DIODE | |
1N6642D2B | SEME-LAB |
获取价格 |
SILICON EPITAXIAL PLANAR DIODE | |
1N6642D2D |
获取价格 |
Diode | ||
1N6642R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.3A, 100V V(RRM), Silicon, | |
1N6642U | STMICROELECTRONICS |
获取价格 |
Aerospace 0.3 A - 100 V switching diode | |
1N6642U | SENSITRON |
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SIGNAL OR COMPUTER DIODE | |
1N6642U | CDI-DIODE |
获取价格 |
SWITCHING DIODES |