5秒后页面跳转
1N6642D1A PDF预览

1N6642D1A

更新时间: 2024-09-14 07:23:11
品牌 Logo 应用领域
SEME-LAB 二极管局域网
页数 文件大小 规格书
4页 320K
描述
SILICON EPITAXIAL PLANAR DIODE

1N6642D1A 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:R-CDSO-N2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.73其他特性:HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-CDSO-N2
元件数量:1端子数量:2
最高工作温度:200 °C最低工作温度:-65 °C
最大输出电流:0.3 A封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:75 V最大反向恢复时间:0.005 µs
表面贴装:YES端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N6642D1A 数据手册

 浏览型号1N6642D1A的Datasheet PDF文件第2页浏览型号1N6642D1A的Datasheet PDF文件第3页浏览型号1N6642D1A的Datasheet PDF文件第4页 
SILICON EPITAXIAL  
PLANAR DIODE  
1N6642D1A  
Low Leakage  
Fast Switching  
Low Forward Voltage  
Hermetic Ceramic Package Designed as a Drop-In Replacement  
for “MELF-4.5 (D-5D)”/ ”DO-213AA” Package.  
Suitable for general purpose, switching applications.  
Space Level and High-Reliability Screening Options Available  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
A
V
V
I
Breakdown Voltage  
100V  
BR  
Working Peak Reverse Voltage  
75V  
RWM  
(1)  
Average Rectified Output Current, T = 75°C  
A
Surge Current (half sine wave, t = 8.3ms  
p
300mA  
2.5A  
O
I
FSM  
(1)  
P
T = 75°C  
A
Total Power Dissipation at  
Total Power Dissipation at  
TBD  
D
Derate Above 75°C  
TBD  
P
T
= 75°C  
TBD  
D
SP  
Derate Above 75°C  
TBD  
T
T
Junction Temperature Range  
Storage Temperature Range  
-65 to +200°C  
-65 to +200°C  
J
stg  
THERMAL PROPERTIES  
Symbols  
(1)  
Parameters  
Max.  
Units  
°C/W  
°C/W  
R
Thermal Resistance, Junction To Ambient  
TBD  
TBD  
θJA  
Thermal Resistance, Junction To Solder Pads. T = 25°C  
SP  
R
θJSP(IN)  
Notes  
(1) Thermal PCB rating to be determined.  
‡ Recommended solder pad layout dimensions for this device, as detailed within this datasheet for the MELF-4.5 (D-5D) device.  
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.  
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However  
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to  
verify that datasheets are current before placing orders.  
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB  
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com  
Document Number 8882  
Issue 1  
Page 1 of 4  
Website: http://www.semelab-tt.com  

与1N6642D1A相关器件

型号 品牌 获取价格 描述 数据表
1N6642D2A SEME-LAB

获取价格

SILICON EPITAXIAL PLANAR DIODE
1N6642D2B SEME-LAB

获取价格

SILICON EPITAXIAL PLANAR DIODE
1N6642D2D

获取价格

Diode
1N6642R MICROSEMI

获取价格

Rectifier Diode, 1 Element, 0.3A, 100V V(RRM), Silicon,
1N6642U STMICROELECTRONICS

获取价格

Aerospace 0.3 A - 100 V switching diode
1N6642U SENSITRON

获取价格

SIGNAL OR COMPUTER DIODE
1N6642U CDI-DIODE

获取价格

SWITCHING DIODES
1N6642U MICROSEMI

获取价格

SWITCHING DIODES
1N6642U01D STMICROELECTRONICS

获取价格

航空航天0.3 A- 100 V开关二极管
1N6642U02D STMICROELECTRONICS

获取价格

航空航天0.3 A- 100 V开关二极管