• 1N6638US,1N6642US, 1N6643US AVAILABLE IN JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/578
• 1N6638U,1N6642U, 1N6643U AVAILABLE IN JAN, JANTX, JANTXV AND JANS
1N6638U & US
1N6642U & US
1N6643U & US
PER MIL-PRF-19500/578
• SWITCHING DIODES
• NON-CAVITY GLASS PACKAGE
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA
Derating: 4.6 mA/°C Above T
Surge Current: IFSM = 2.5A, half sine wave, P = 8.3ms
= + 110°C
EC
w
MILLIMETERS
INCHES
DIM MIN
MAX
2.16
0.71
4.95
MIN MAX
0.070 0.085
0.019 0.028
0.165 0.195
0.003MIN.
D
F
G
1.78
0.48
4.19
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
V
V
V
I
V
I
t
t
rr
S
0.08MIN.
BR
@ I
RWM
F1
F2
@
F2
fr
TYPES
I
I
= 10 mA
I = 10 mA
F
R
FM
F
R
=100 µA
=10 mA
FIGURE 1
(Pulsed)
(Pulsed)
=50 mA
ns
I
= 1 mA
REC
V (pk)
V (pk)
V dc
V dc
1.1
mA
ns
1N6638U & US
1N6642U
150
&
125
US
U0S
0.8
200
1.2
100
20
100
20
4.5
DESIGN DATA
100
755 1.0
751.0
20 .0
6.0
5
1N6643U
&
1.2
CASE: D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/578
LEAD FINISH: Tin / Lead
I
I
I
I
C
C
R1
R2
V
R3
R4
T1
T2
TYPES
THERMAL RESISTANCE: (R
50 °C/W maximum at L = 0
):
OJEC
V
V
= 20 V
V
= V
V
=
V
=
R
R
@
R
R
R
RWM
= 150°C
R
= 20 V
= V
T
= 150°C
T
0V
1.5V
RWM
A
A
THERMAL IMPEDANCE: (Z
°C/W maximum
): 25
nA dc
µA dc
µA dc
µA dc
pF
pF
JX
O
1N6638U
1N6642U & US
1N6643U & US
&
25
50
US 0
0.5
0.5
350.5 100
2.52.0
100
160
50
75
5.0
5.0
2.8
2.8
POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
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PHONE (781) 665-1071
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FAX (781) 665-7379
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