1N6641HRX

更新时间： 2024-09-14 13:03:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管开关计算机
页数	文件大小	规格书
1页	37K
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数据手册

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1N6641HRX 数据手册

1N6639

1N6640

1N6641

FEATURES

Available in axial leaded and surface mount configurations

300 mAmp

75-100 Volts

4 nsec

Ultra Fast Reverse Recovery Time

Very low Capacitance

Metallurgically Bonded

Non-cavity glass package

Computer

Switching Diode

Available as JANTX, JANTXV and JANS per MIL-S-19500/609

Replacement for 1N4150 Types

MAXIMUM RATINGS @ 25°C

MECHANICAL

CHARACTERISTICS

Type

Reverse

Voltage

Working

Peak

Operating

Current

Peak

Forward

Surge

Current

(see note 2)

Thermal

Resistance

Junction

to Lead

(L=.375”)

Thermal

Resistance

Junction

to Case

Operating

and Storage

Temperature

Number

Reverse

Voltage

(see note 1)

CASE STYLE: Axial Leaded

Part Numbers

VBR

VRWM

IFSM

RqJL

RqJC

TOP & Tstg

CASE: Voidless Hermetically Sealed Hard Glass

LEAD: Solder dipped Copper Clad Steel

MARKING: Body Painted, Alpha Numeric

POLARITY: Cathode Band

Volts

100

Volts

300

Amps

2.5

°C/W

160

°C/W

°C

-65 to +175

1N6639

1N6639US

1N6640

1N6640US

1N6641

1N6641US

2.5

ELECTRICAL CHARACTERISTICS @ 25°C

Type Number

Maximum Forward Voltage

MaximumD.C. Reverse Current

VF@IF

VR=75V

TA=25°C

100

VR=50V

TA=25°C

VR=75V

TA=150°C

100

VR=50V

TA=150°C

V@ 200mA

V@ 500mA

1.2V

1N6639

1N6639US

1N6640

1N6640US

1N6641

1.0V

1.1

100

1.1

1N6641US

Type Number

Reverse

Recovery

Time

(note 3)

trr

Maximum Forward Recovery

Voltage and Time

Maximum Junction Capacitance

f=1MHz

Vsig=50mV(p-p)

If=50mA, tr = 1ns

Vfr

Volts

5.0

tfr

VR=0V

VR = 10 V

2.5

1N6639

5.0

2.5

3.0

1N6639US

1N6640

1N6640US

1N6641

CASE STYLE: Surface Mount-US

END CAP MATERIAL: Solid Silver

END CAP STYLE: Square

POLARITY: Cathode Dot on End Cap

1N6641US

Note:

(1) At maximum end cap temperature=110°C for US suffix types. Derate at 4.6mA/°C above end cap

temperature=110°C. Derate axial types at 3.0mA/°C above ambient temperature temperature=25°C.

(2) Test Pulse = 8.3ms, half sine wave

(3) IF= IR =10mA & I(REC)=1.0mA

Microsemi Santa Ana· 2830 S. Fairview Street· Santa Ana, California 92704 · Tel: (714) 979-8220

DATA SHEET #: MSC0133A REVISED: 1/25/96

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与1N6641HRX相关器件

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1N6641U	ETC	获取价格	SIGNAL OR COMPUTER DIODE
1N6641US	MICROSEMI	获取价格	300 mAmp 75-100 Volts 4 nsec Computer Switching Diode
1N6641US	CDI-DIODE	获取价格	SWITCHING DIODES
1N6641US	SENSITRON	获取价格	Small Signal/Switching Diodes
1N6642	MICROSEMI	获取价格	COMPUTER DIODE Switching
1N6642	CDI-DIODE	获取价格	SWITCHING DIODES
1N6642	SENSITRON	获取价格	SIGNAL OR COMPUTER DIODE
1N6642578E	ETC	获取价格	SIGNAL OR COMPUTER DIODE
1N6642CSM	SEME-LAB	获取价格	SWITCHING DIODE IN A CERAMIC SURFACE MOUNT
1N6642D1A	SEME-LAB	获取价格	SILICON EPITAXIAL PLANAR DIODE