5秒后页面跳转
1N6640USE3 PDF预览

1N6640USE3

更新时间: 2024-09-14 14:48:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
2页 44K
描述
Rectifier Diode, 1 Element, 0.3A, Silicon, HERMETIC SEALED, GLASS, D-5D, 2 PIN

1N6640USE3 技术参数

生命周期:Active包装说明:HERMETIC SEALED, GLASS, D-5D, 2 PIN
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.59
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-LELF-R2元件数量:1
端子数量:2最大输出电流:0.3 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大反向恢复时间:0.004 µs
表面贴装:YES端子形式:WRAP AROUND
端子位置:ENDBase Number Matches:1

1N6640USE3 数据手册

 浏览型号1N6640USE3的Datasheet PDF文件第2页 
1N6639US  
1N6640US  
1N6641US  
• 1N6639US THRU 1N6641US AVAILABLE IN JAN, JANTX, JANTXV AND JANS  
PER MIL-PRF-19500/609  
• SWITCHING DIODES  
• NON-CAVITY GLASS PACKAGE  
• METALLURGICALLY BONDED  
MAXIMUM RATINGS  
Operating Temperature: -65°C to +175°C  
Storage Temperature: -65°C to +175°C  
Operating Current: 300 mA  
Derating: 4.6 mA/°C Above T  
Surge Current: IFSM = 2.5A, P = 8.3ms  
= + 110°C  
EC  
w
MILLIMETERS  
INCHES  
DIM MIN  
MAX  
2.16  
0.71  
4.95  
MIN MAX  
0.070 0.085  
0.019 0.028  
0.165 0.195  
0.003MIN.  
D
F
G
1.78  
0.48  
4.19  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise speci½ed.  
S
0.08MIN.  
V
V
I
I
T
T
C
BRR  
RWM  
R1  
R2  
FR  
F
RR  
T
= 0  
TYPES  
@ 10 µA  
@ T = +25°C @ T = +150°C  
I
I
I
= 10 mA  
= 10 mA  
= 100  
V
A
A
R
F
R
R
V
=
V
=
R
R
= 200 mA  
V
V
RWM  
RWM  
L
FIGURE 1  
V
V
nA dc  
µA dc  
ns  
ns  
pF  
(pk)  
(pk)  
1N6639US  
1N6640US  
1N6641US  
100  
75  
75  
75  
50  
50  
100  
100  
100  
100  
100  
100  
10  
10  
10  
4.0  
4.0  
5.0  
2.5  
2.5  
3.0  
DESIGN DATA  
CASE: D-5D, Hermetically sealed glass  
case, per MIL-PRF- 19500/609  
FORWARD VOLTAGE:  
LEAD FINISH: Tin / Lead  
V
I
F
F
@
TYPES  
VdC  
mA  
THERMAL RESISTANCE: (R  
50 °C/W maximum at L = 0  
):  
OJEC  
MIN  
MAX  
(PULSED)  
1N6639US  
1.20  
500  
0.54  
0.76  
0.82  
0.87  
0.62  
0.86  
0.92  
1.00  
1
50  
THERMAL IMPEDANCE: (Z  
°C/W maximum  
): 25  
OJX  
1N6640US  
1N6641US  
100  
200  
POLARITY: Cathode end is banded  
1.10  
200  
MOUNTING SURFACE SELECTION:  
The Axial Coefficient of Expansion  
(COE) of this device is approximately  
+ 4PPM / °C. The COE of the Mounting  
Surface System should be selected to  
provide a suitable match with this  
device.  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
FAX (781) 689-0803  
WEBSITE: http://www.microsemi.com  
159  

与1N6640USE3相关器件

型号 品牌 获取价格 描述 数据表
1N6641 MICROSEMI

获取价格

300 mAmp 75-100 Volts 4 nsec Computer Switching Diode
1N6641 CDI-DIODE

获取价格

SWITCHING DIODES
1N6641 SENSITRON

获取价格

Small Signal/Switching Diodes
1N6641609C ETC

获取价格

SIGNAL OR COMPUTER DIODE
1N6641HR MICROSEMI

获取价格

Rectifier Diode, 1 Element, 0.3A, Silicon, DO-35,
1N6641HRS MICROSEMI

获取价格

Rectifier Diode, 1 Element, 0.3A, Silicon, DO-35,
1N6641HRV MICROSEMI

获取价格

Rectifier Diode, 1 Element, 0.3A, Silicon, DO-35,
1N6641HRX MICROSEMI

获取价格

暂无描述
1N6641U ETC

获取价格

SIGNAL OR COMPUTER DIODE
1N6641US MICROSEMI

获取价格

300 mAmp 75-100 Volts 4 nsec Computer Switching Diode