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1N60L-TF2-T PDF预览

1N60L-TF2-T

更新时间: 2024-10-31 01:04:51
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
7页 361K
描述
N-CHANNEL POWER MOSFET

1N60L-TF2-T 数据手册

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UNISONIC TECHNOLOGIES CO., LTD  
1N60  
Power MOSFET  
1.2A, 600V N-CHANNEL  
POWER MOSFET  
DESCRIPTION  
The UTC 1N60 is a high voltage MOSFET and is designed to  
have better characteristics, such as fast switching time, low gate  
charge, low on-state resistance and have a high rugged  
avalanche characteristics. This power MOSFET is usually used at  
high speed switching applications in power supplies, PWM motor  
controls, high efficient DC to DC converters and bridge circuits.  
FEATURES  
* RDS(ON) <11.5@ VGS=10V, ID=0.6A  
* Ultra Low gate charge (typical 5.0nC)  
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)  
* Fast switching capability  
* Avalanche energy specified  
* Improved dv/dt capability, high ruggedness  
SYMBOL  
www.unisonic.com.tw  
1 of 7  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R502-052.N  

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